SRADM1004 Todos los transistores

 

SRADM1004 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SRADM1004

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 250 W

Tensión drenaje-fuente (Vds): 250 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 54 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 180 nC

Tiempo de elevación (tr): 80 nS

Conductancia de drenaje-sustrato (Cd): 696 pF

Resistencia drenaje-fuente RDS(on): 0.03 Ohm

Empaquetado / Estuche: SMD-2

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SRADM1004 Datasheet (PDF)

1.1. sradm1004.pdf Size:151K _upd

SRADM1004
SRADM1004

SENSITRON SRADM1004 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5399, REV. - HERMETIC RAD HARD POWER MOSFET FEATURES:  Low RDS(on)  Single Event Effect (SEE) hardened, LET 55, Range: 90μm o VGS = -15V, VDS = 250V o VGS = -20V, VDS = 160V  Total Ionization Dose (TID) hardened, 100kRad  Surface mount SMD-2 package  Near equivalent to IRHNA67260 MAXIMUM RAT

2.1. sradm1003.pdf Size:123K _upd

SRADM1004
SRADM1004

SRADM1003 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5398, REV. - HERMETIC RAD HARD POWER MOSFET FEATURES:  Low RDS(on)  Single Event Effect (SEE) hardened, LET 55, Range: 90μm o VGS = -15V, VDS = 250V o VGS = -20V, VDS = 160V  Total Ionization Dose (TID) hardened, 100kRad  TO-254 package  Near equivalent to IRHMS67260 MAXIMUM RATINGS ALL RAT

2.2. sradm1007.pdf Size:143K _upd

SRADM1004
SRADM1004

 SENSITRON SRADM1007 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5405, REV. - HERMETIC RAD HARD POWER MOSFET FEATURES:  Low RDS(on)  Single Event Effect (SEE) hardened, o LET 55, Range: 90μm  VGS = -20V, VDS = 100V  Total Ionization Dose (TID) hardened, 100kRad  Surface mount SMD-0.5 package  Near equivalent to IRHNJ7130 MAXIMUM RATINGS ALL RATINGS AR

 2.3. sradm1006.pdf Size:135K _upd

SRADM1004
SRADM1004

 SENSITRON SRADM1006 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5404, REV. - HERMETIC RAD HARD POWER MOSFET FEATURES:  Low RDS(on)  Single Event Effect (SEE) hardened, o LET 55, Range: 90μm  VGS = -20V, VDS = 100V  Total Ionization Dose (TID) hardened, 100kRad  Isolated TO-257 package  Near equivalent to IRHY7130CM MAXIMUM RATINGS ALL RATINGS ARE AT

2.4. sradm1002.pdf Size:174K _upd

SRADM1004
SRADM1004

SENSITRON SRADM1002 SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5311, REV. A HERMETIC RAD HARD POWER MOSFET N-CHANNEL QUAD FEATURES:  Four 250 Volt, 0.36 Ohm, 4.4A RAD HARD MOSFETs  Single Event Effect (SEE) hardened, LET 55, Range: 90μm o VGS = -15V, VDS = 250V o VGS = -20V, VDS = 160V  Total Ionization Dose (TID) hardened, 100kRad (Level R)  Fast Switching

 2.5. sradm1005.pdf Size:143K _upd

SRADM1004
SRADM1004

SRADM1005 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5403, REV. - HERMETIC RAD HARD POWER MOSFET FEATURES:  Low RDS(on)  Single Event Effect (SEE) hardened, o LET 85, Range: 118μm  VGS = -10V, VDS = 250V  VGS = -15V, VDS = 120V o LET 55, Range: 90μm  VGS = -15V, VDS = 250V  VGS = -20V, VDS = 160V  Total Ionization Dose (TID) hardened,

2.6. sradm1008.pdf Size:136K _upd

SRADM1004
SRADM1004

SRADM1008 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 5406, REV. - HERMETIC RAD HARD POWER MOSFET FEATURES:  Low RDS(on)  Single Event Effect (SEE) hardened, o LET 85, Range: 118μm  VGS = -10V, VDS = 250V  VGS = -15V, VDS = 120V o LET 55, Range: 90μm  VGS = -15V, VDS = 250V  VGS = -20V, VDS = 160V  Total Ionization Dose (TID) hardened

Otros transistores... CED6861 , CED95P04 , CEF14P20 , CEF15P15 , CEF6601 , CEH2305 , CEH2313 , CEH2321 , 2SK170 , CEH2331 , CEH3456 , CEM2163 , CEM2187 , CEM2281 , CEM2401 , CEM2407 , CEM3053 .

 
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