SRM10N60TC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SRM10N60TC
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pd): 75 W
Tensión drenaje-fuente (Vds): 600 V
Tensión compuerta-fuente (Vgs): 30 V
Corriente continua de drenaje (Id): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral compuerta-fuente Vgs(th): 4.29 V
Conductancia de drenaje-sustrato (Cd): 168 pF
Resistencia drenaje-fuente RDS(on): 0.77 Ohm
Empaquetado / Estuche: TO-220C
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SRM10N60TC Datasheet (PDF)
2.1. srm10n60.pdf 
Size:251K _upd
Datasheet 10A, 600V, N-Channel Power MOSFET SRM10N60 General Description Symbol The Sanrise SRM10N60 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on- state resistance. Sanrise SRM10N60 break down voltage rating is 600V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at hi
3.1. srm10n65.pdf Size:251K _upd
Datasheet 10A, 650V, N-Channel Power MOSFET SRM10N65 General Description Symbol The Sanrise SRM10N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on- state resistance. Sanrise SRM10N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at hi
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , 2N7002 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
