SRM10N60TC MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SRM10N60TC

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 75 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4.29 V

Conductancia de drenaje-sustrato (Cd): 168 pF

Resistencia drenaje-fuente RDS(on): 0.77 Ohm

Empaquetado / Estuche: TO-220C

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SRM10N60TC Datasheet (PDF)

2.1. srm10n60.pdf Size:251K _upd

Datasheet 10A, 600V, N-Channel Power MOSFET SRM10N60 General Description Symbol The Sanrise SRM10N60 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on- state resistance. Sanrise SRM10N60 break down voltage rating is 600V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at hi

3.1. srm10n65.pdf Size:251K _upd

Datasheet 10A, 650V, N-Channel Power MOSFET SRM10N65 General Description Symbol The Sanrise SRM10N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on- state resistance. Sanrise SRM10N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at hi

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