SRM4N60DTR Todos los transistores

 

SRM4N60DTR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SRM4N60DTR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 52 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 4 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3.9 V

Conductancia de drenaje-sustrato (Cd): 68 pF

Resistencia drenaje-fuente RDS(on): 2.41 Ohm

Empaquetado / Estuche: TO-252

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SRM4N60DTR Datasheet (PDF)

3.1. srm4n60.pdf Size:305K _upd

SRM4N60DTR
SRM4N60DTR

Datasheet 4A, 600V, N-Channel Power MOSFET SRM4N60 General Description Symbol The Sanrise SRM4N60 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on- state resistance. Sanrise SRM4N60 break down voltage rating is 600V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high

4.1. srm4n65.pdf Size:305K _upd

SRM4N60DTR
SRM4N60DTR

Datasheet 4A, 650V, N-Channel Power MOSFET SRM4N65 General Description Symbol The Sanrise SRM4N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on- state resistance. Sanrise SRM4N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high

 5.1. srm4n70.pdf Size:171K _upd

SRM4N60DTR
SRM4N60DTR

Datasheet 4A, 700V, N-Channel Power MOSFET SRM4N70 General Description Symbol The Sanrise SRM4N70 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on- state resistance. Sanrise SRM4N70 break down voltage rating is 700V, which leads the system has enough margin in some sensitive application. It has a high rugged a

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