SRM4N60TF MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SRM4N60TF
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 27.8 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 4 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 68 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 2.41 Ohm
Encapsulados: TO-220F
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SRM4N60TF datasheet
srm4n60.pdf
Datasheet 4A, 600V, N-Channel Power MOSFET SRM4N60 General Description Symbol The Sanrise SRM4N60 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on- state resistance. Sanrise SRM4N60 break down voltage rating is 600V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high
srm4n65.pdf
Datasheet 4A, 650V, N-Channel Power MOSFET SRM4N65 General Description Symbol The Sanrise SRM4N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on- state resistance. Sanrise SRM4N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high
srm4n70.pdf
Datasheet 4A, 700V, N-Channel Power MOSFET SRM4N70 General Description Symbol The Sanrise SRM4N70 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on- state resistance. Sanrise SRM4N70 break down voltage rating is 700V, which leads the system has enough margin in some sensitive application. It has a high rugged a
Otros transistores... SRM12N65TF, SRM12N65TC, SRM20N65TF, SRM20N65TC, SRM2N60, SRM4N60D1, SRM4N60DTR, SRM4N60U, IRFB7545, SRM4N65D1, SRM4N65DTR, SRM4N65U, SRM4N65TF, SRM4N70, SRM6N60D1, SRM6N60DTR, SRM6N60TF
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