SRM6N60DTR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SRM6N60DTR
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
   |Id|ⓘ - Corriente continua de drenaje: 6 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Cossⓘ - Capacitancia de salida: 105 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.86 Ohm
   Paquete / Cubierta: TO-252

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SRM6N60DTR Datasheet (PDF)

7.1. Size:244K sanrise-tech
srm6n60.pdf

Datasheet 6A, 600V, N-Channel Power MOSFET SRM6N60General Description Symbol The Sanrise SRM6N60 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM6N60 break down voltage rating is 600V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high

9.1. Size:171K sanrise-tech
srm6n70.pdf

Datasheet 6A, 700V, N-Channel Power MOSFET SRM6N70General Description Symbol The Sanrise SRM6N70 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM6N70 break down voltage rating is 700V, which leads the system has enough margin in some sensitive application. It has a high rugged a

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