SRM7N65TF-E1 Todos los transistores

 

SRM7N65TF-E1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SRM7N65TF-E1

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 27 W

Tensión drenaje-fuente (Vds): 650 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 7 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 3.6 V

Conductancia de drenaje-sustrato (Cd): 95 pF

Resistencia drenaje-fuente RDS(on): 1.4 Ohm

Empaquetado / Estuche: TO-220F

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SRM7N65TF-E1 Datasheet (PDF)

3.1. srm7n65e1.pdf Size:295K _upd

SRM7N65TF-E1
SRM7N65TF-E1

Datasheet 7A, 650V, N-Channel Power MOSFET SRM7N65 General Description Symbol The Sanrise SRM7N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on- state resistance. Sanrise SRM7N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high

3.2. srm7n65.pdf Size:199K _upd

SRM7N65TF-E1
SRM7N65TF-E1

Datasheet 7A, 650V, N-Channel Power MOSFET SRM7N65 General Description Symbol The Sanrise SRM7N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on- state resistance. Sanrise SRM7N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high

 4.1. srm7n60.pdf Size:199K _upd

SRM7N65TF-E1
SRM7N65TF-E1

Datasheet 7A, 600V, N-Channel Power MOSFET SRM7N60 General Description Symbol The Sanrise SRM7N60 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on- state resistance. Sanrise SRM7N60 break down voltage rating is 600V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high

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