SRM7N65TF-E1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SRM7N65TF-E1
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 27 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Cossⓘ - Capacitancia de salida: 95 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 1.4 Ohm
Paquete / Cubierta: TO-220F
- Selección de transistores por parámetros
SRM7N65TF-E1 Datasheet (PDF)
srm7n65e1.pdf

Datasheet 7A, 650V, N-Channel Power MOSFET SRM7N65General Description Symbol The Sanrise SRM7N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM7N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high
srm7n65.pdf

Datasheet 7A, 650V, N-Channel Power MOSFET SRM7N65General Description Symbol The Sanrise SRM7N65 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM7N65 break down voltage rating is 650V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high
srm7n60.pdf

Datasheet 7A, 600V, N-Channel Power MOSFET SRM7N60General Description Symbol The Sanrise SRM7N60 is a high voltage power MOSFET, which has better characteristics, such as fast switching time, low gate charge, low on-state resistance. Sanrise SRM7N60 break down voltage rating is 600V and it has a high rugged avalanche characteristics. This power MOSFET is usually used at high
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History: APM9953K | IRF7316QPBF | CS3R50FA9 | VBQA1405 | VSD090N10MS | HRP72N06K | WSP4888
History: APM9953K | IRF7316QPBF | CS3R50FA9 | VBQA1405 | VSD090N10MS | HRP72N06K | WSP4888



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