ST2319SRG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ST2319SRG
Código: 19YW
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.2 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 3.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
|Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 1.5 VQgⓘ - Carga de la puerta: 9 nC
trⓘ - Tiempo de subida: 10 nS
Cossⓘ - Capacitancia de salida: 95 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.075 Ohm
Paquete / Cubierta: SOT-23
ST2319SRG Datasheet (PDF)
st2319srg.pdf

ST2319SRG P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST2319SRG is the P-Channel logic enhancement mode power field effect transistor is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and not
wst2319.pdf

WST2319P-Ch MOSFETProduct SummeryGeneral Description The WST2319 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density ,which provide excellent RDSON and gate charge-40V 35m -6Afor most of the synchronous buck converterapplications .Applications The WST2319 meet the RoHS and Green Product High Frequency Point-of-Load Synchronou
st2310hi.pdf

ST2310HIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTING HIGH VOLTAGE CAPABILITY ( > 1500 V) HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS3APPLICATIONS: 2 HORIZONTAL DEFLECTION FOR1MONITORS 15" AND HIGH END TVSISOWATT218DESCRIPTION The device is manu
st2310dhi.pdf

ST2310DHIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTOR NEW SERIES, ENHANCED PERFORMANCE FULLY INSULATED PACKAGE (U.L.COMPLIANT) FOR EASY MOUNTING INTEGRATED FREE WHEELING DIODE HIGH VOLTAGE CAPABILITY (> 1500 V) HIGH SWITCHING SPEED TIGTHER hfe CONTROL IMPROVED RUGGEDNESS32APPLICATIONS: 1 HORIZONTAL DEFLECTION HIGH END TVSISOWATT218DESCRIPTION The devi
Otros transistores... ST2301A , ST2302 , ST2303SRG , ST2304 , ST2304SRG , ST2305 , ST2305A , ST2318SRG , STP75NF75 , ST2341A , ST2341S23RG , ST2342 , ST25N10 , ST3400S23RG , ST3400SRG , ST3401M23RG , ST3401SRG .
History: AP6950GYT-HF | AP9962AGH-HF
History: AP6950GYT-HF | AP9962AGH-HF



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