ST3413A Todos los transistores

 ..1. Size:262K  stansontech
 st3413a.pdf

ST3413A P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST3413A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and n

 ..2. Size:869K  cn vbsemi
 st3413a.pdf

ST3413A www.VBsemi.tw P-Channel 20-V (D-S) MOSFET FEATURES MOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFET e - 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested 0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/EC APPLICATIONS

 9.1. Size:401K  central
 cmst3410.pdf

CMST3410 NPN CMST7410 PNP www.centralsemi.com SURFACE MOUNT COMPLEMENTARY LOW VCE(SAT) DESCRIPTION The CENTRAL SEMICONDUCTOR CMST3410, SILICON TRANSISTORS CMST7410 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERmini surface mount package, designed for battery driven, handheld devices requiring high current and

 9.2. Size:661K  stansontech
 st3414a.pdf

ST3414A N Channel Enhancement Mode MOSFET 3.0A DESCRIPTION ST3414A is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and noteb

 9.3. Size:969K  jestek
 jst3415c.pdf

JST3415C -20V,-5A P-Channel Mosfet FEATURES SOT-23 RDS(ON) 32m @VGS=-4.5V RDS(ON) 51m @VGS=-2.5V ESD Rating HBM 2.0KV APPLICATIONS PWM Applications Load Switch Power Management MARKING P-CHANNEL MOSFET Maximum ratings (TC=25 unless otherwise noted) Parameter Symbol Value Unit Drain-Source Voltage VDS -20 V Gate-Source Voltage V 12 GS I -5 D Continuous Drai

 9.4. Size:730K  winsok
 wst3416.pdf

WST3416 N-Ch MOSFET General Description Product Summery The WST3416 uses advanced trench technology BVDSS RDSON ID to provi de excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.1V. 6.5A 20V 18m This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Applications High Frequency Point-of-Load Synchronous

 9.5. Size:1005K  winsok
 wst3415.pdf

WST3415 P-Ch MOSFET General Description Product Summery The WST3415 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -20V 44m -5.5A for most of the small power switching and load switch applications. Applications The WST3415 meet the RoHS and Green Product requirement , with full

 9.6. Size:1604K  winsok
 wst3415a.pdf

WST3415A P-Ch MOSFET General Description Product Summery The WST3415A is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and -20V 58m -5.3A gate charge for most of the small power switching and load switch applications. Applications The WST3415A meet the RoHS and Green Product requirement , with fu

 9.7. Size:770K  winsok
 wst3414.pdf

WST3414 N-Ch MOSFET General Description Product Summery The WST3414 is the highest performance trench BVDSS RDSON ID N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge 20V 24m 6.0A for most of the small power switching and load switch applications. Applications The WST3414 meet the RoHS and Green Product requirement with full funct