ST3413A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: ST3413A
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.25 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 8 V
|Id|ⓘ - Corriente continua de drenaje: 3.5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 13 nS
Cossⓘ - Capacitancia de salida: 85 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.125 Ohm
Paquete / Cubierta: SOT-23
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ST3413A Datasheet (PDF)
st3413a.pdf

ST3413A P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST3413A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and n
st3413a.pdf

ST3413Awww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS
cmst3410.pdf

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st3414a.pdf

ST3414A N Channel Enhancement Mode MOSFET 3.0A DESCRIPTION ST3414A is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and noteb
Otros transistores... ST3400S23RG , ST3400SRG , ST3401M23RG , ST3401SRG , ST3406 , ST3406SRG , ST3407S23RG , ST3407SRG , 8205A , ST3414A , ST3421SRG , ST3422A , ST36N06 , ST36N10D , ST47P06D , ST75N75 , ST9435A .
History: 2N3460 | NTGS3447PT1G | KX12N65F | 2SK751 | BL10N70A-P | MTB02N03H8 | FIR120N055PG
History: 2N3460 | NTGS3447PT1G | KX12N65F | 2SK751 | BL10N70A-P | MTB02N03H8 | FIR120N055PG



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