ST3414A Todos los transistores

 

ST3414A MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: ST3414A
   Código: 14YA
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 1.25 W
   Voltaje máximo drenador - fuente |Vds|: 20 V
   Voltaje máximo fuente - puerta |Vgs|: 12 V
   Corriente continua de drenaje |Id|: 3 A
   Temperatura máxima de unión (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 1 V
   Carga de la puerta (Qg): 4.8 nC
   Tiempo de subida (tr): 12 nS
   Conductancia de drenaje-sustrato (Cd): 85 pF
   Resistencia entre drenaje y fuente RDS(on): 0.045 Ohm
   Paquete / Cubierta: SOT-23

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ST3414A Datasheet (PDF)

 ..1. Size:661K  stansontech
st3414a.pdf

ST3414A
ST3414A

ST3414A N Channel Enhancement Mode MOSFET 3.0A DESCRIPTION ST3414A is the N-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology.This high density process is especially tailored to minimize on-state resistance.These devices are particularly suited for low voltage application such as cellular phone and noteb

 8.1. Size:770K  winsok
wst3414.pdf

ST3414A
ST3414A

WST3414N-Ch MOSFETGeneral Description Product SummeryThe WST3414 is the highest performance trench BVDSS RDSON ID N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge 20V 24m 6.0Afor most of the small power switching and load switch applications. Applications The WST3414 meet the RoHS and Green Product requirement with full funct

 9.1. Size:401K  central
cmst3410.pdf

ST3414A
ST3414A

CMST3410 NPNCMST7410 PNPwww.centralsemi.comSURFACE MOUNTCOMPLEMENTARY LOW VCE(SAT) DESCRIPTION:The CENTRAL SEMICONDUCTOR CMST3410, SILICON TRANSISTORSCMST7410 types are complementary silicon transistors manufactured by the epitaxial planar process, epoxy molded in a SUPERmini surface mount package, designed for battery driven, handheld devices requiring high current and

 9.2. Size:262K  stansontech
st3413a.pdf

ST3414A
ST3414A

ST3413A P Channel Enhancement Mode MOSFET -3.5A DESCRIPTION ST3413A is the P-Channel logic enhancement mode power field effect transistor which is produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and n

 9.3. Size:969K  jestek
jst3415c.pdf

ST3414A
ST3414A

JST3415C-20V,-5AP-Channel MosfetFEATURESSOT-23RDS(ON)32m @VGS=-4.5V RDS(ON) 51m @VGS=-2.5VESD Rating: HBM 2.0KVAPPLICATIONSPWM ApplicationsLoad SwitchPower ManagementMARKING P-CHANNEL MOSFETMaximum ratings (TC=25 unless otherwise noted)Parameter Symbol Value UnitDrain-Source Voltage VDS -20VGate-Source Voltage V 12GSI -5DContinuous Drai

 9.4. Size:730K  winsok
wst3416.pdf

ST3414A
ST3414A

WST3416N-Ch MOSFETGeneral Description Product SummeryThe WST3416 uses advanced trench technology BVDSS RDSON ID to provi de excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.1V. 6.5A20V 18mThis device is suitable for use as a load switch or in PWM applications. It is ESD protected.Applications High Frequency Point-of-Load Synchronous

 9.5. Size:1005K  winsok
wst3415.pdf

ST3414A
ST3414A

WST3415P-Ch MOSFETGeneral Description Product SummeryThe WST3415 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -20V 44m -5.5Afor most of the small power switching and load switch applications. Applications The WST3415 meet the RoHS and Green Product requirement , with full

 9.6. Size:1604K  winsok
wst3415a.pdf

ST3414A
ST3414A

WST3415AP-Ch MOSFETGeneral Description Product SummeryThe WST3415A is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and -20V 58m -5.3Agate charge for most of the small power switching and load switch applications. Applications The WST3415A meet the RoHS and Green Product requirement , with fu

 9.7. Size:869K  cn vbsemi
st3413a.pdf

ST3414A
ST3414A

ST3413Awww.VBsemi.twP-Channel 20-V (D-S) MOSFETFEATURESMOSFET PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21VDS (V) RDS(on) ()ID (A)a Qg (Typ.)Definition0.035 at VGS = - 10 V - 5e TrenchFET Power MOSFETe- 20 0.043 at VGS = - 4.5 V - 5 10 nC 100 % Rg Tested0.061 at VGS = - 2.5 V - 4.8 Compliant to RoHS Directive 2002/95/ECAPPLICATIONS

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