IXTH15N35MB MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTH15N35MB

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 150 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 350 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 15 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.3 Ohm

Encapsulados: TO247

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IXTH15N35MB datasheet

 ..1. Size:681K  1
 ixth12n45ma ixth12n45mb ixth12n50ma ixth12n50mb ixth15n35ma ixth15n35mb ixth15n40ma ixth15n40mb ixtz42n20mb ixtz67n10ma ixtz67n10mb.pdf pdf_icon

IXTH15N35MB

 7.1. Size:148K  ixys
 ixth15n70.pdf pdf_icon

IXTH15N35MB

IXTH15N70 PCB 24 IXTH 15N70 VDSS = 700 V MegaMOSTMFET ID (cont) = 15 A RDS(on) = 0.45 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C 700 V VDGR TJ = 25 C to 150 C; RGS = 1 M 700 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 T

 7.2. Size:316K  ixys
 ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf pdf_icon

IXTH15N35MB

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 7.3. Size:65K  ixys
 ixth15n45a ixth15n50a ixtm15n45a ixtm15n50a.pdf pdf_icon

IXTH15N35MB

MOSTRAR MÁS

Otros transistores... IXTH12N50MA, IXTH12N50MB, IXTH12N90, IXTH13N110, IXTH13N80, IXTH14N100, IXTH14N80, IXTH15N35MA, AOD4184A, IXTH15N40MA, IXTH15N40MB, IXTH15N60, IXTH20M60MB, IXTH20N55MA, IXTH20N55MB, IXTH20N60, IXTH20N60MA