SUB65P04-15 Todos los transistores

 

SUB65P04-15 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SUB65P04-15

Tipo de FET: MOSFET

Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 120 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 40 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 65 A

Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 380 nS

Cossⓘ - Capacitancia de salida: 640 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm

Encapsulados: TO-263

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SUB65P04-15 datasheet

 ..1. Size:82K  vishay
sup65p04-15 sub65p04-15.pdf pdf_icon

SUB65P04-15

SUP/SUB65P04-15 New Product Vishay Siliconix P-Channel 40-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.015 @ VGS = 10 V 65 40 40 0.023 @ VGS = 4.5 V 50 S TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S D SUB65P04-15 Top View P-Channel MOSFET SUP65P04-15 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Param

 ..2. Size:163K  vishay
sub65p04-15 sup65p04-15.pdf pdf_icon

SUB65P04-15

SUP/SUB65P04-15 Vishay Siliconix P-Channel 40 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Compliant to RoHS Directive 2002/95/EC 0.015 at VGS = - 10 V - 65 - 40 0.023 at VGS = - 4.5 V - 50 S TO-263 G DRAIN connected to TAB G D S Top View G D S SUB65P04-15 Top View D SUP65P04-15 P-Channel MOSFET Orderin

 7.1. Size:69K  1
sup65p06-20 sub65p06-20.pdf pdf_icon

SUB65P04-15

SUP/SUB65P06-20 P-Channel Enhancement-Mode Transistors Product Summary V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.020 65a S TO 220AB TO 263 G DRAIN connected to TAB G D S Top View GD S D SUB65P06 20 Top View P Channel MOSFET SUP65P06 20 Absolute Maximum Ratings (TC = 25_C Unless Otherwise Noted) Parameter Symbol Limit Unit Gate-Source Voltage VGS "20 V TC = 25_C 65a Con

 7.2. Size:54K  vishay
sup65p06-20 sub65p06-20.pdf pdf_icon

SUB65P04-15

SUP/SUB65P06-20 Vishay Siliconix P-Channel 60-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 60 0.020 65a TO-220AB S TO-263 G DRAIN connected to TAB G D S G D S Top View Top View D SUB65P06-20 SUP65P06-20 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Gate-Source Voltage VGS "20 V TC = 25_

Otros transistores... ST3421SRG , ST3422A , ST36N06 , ST36N10D , ST47P06D , ST75N75 , ST9435A , ST9435GP , IRFB3607 , SUB75P03-07 , SUB85N10-10 , SUD06N10-225L , SUD08P06-155L , SUD09P10-195 , SUD15N15-95 , SUD17N25-165 , SUD19N20-90 .

 

 

 

 

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