SUD23N06-31L MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SUD23N06-31L datasheet

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SUD23N06-31L Vishay Siliconix N-Channel 60 V (D-S), 175 C MOSFET, Logic Level FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.031 at VGS = 10 V 23 RoHS* 60 0.045 at VGS = 4.5 V 19.5 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET Ordering Information SUD23

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SUD23N06-31L www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwis

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SUD23N06-31 Vishay Siliconix N-Channel 60 V (D-S), MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A)a Qg (Typ.) Definition 0.031 at VGS = 10 V 9.1 TrenchFET Power MOSFET 60 6.5 nC 0.045 at VGS = 4.5 V 7.6 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS TO-252 DC/DC Converte

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SUD23N06-31 www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise