SUD40N02-3M3P MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SUD40N02-3M3P
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 79 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 40 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 105 nC
   trⓘ - Tiempo de subida: 30 nS
   Cossⓘ - Capacitancia de salida: 1430 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0033 Ohm
   Paquete / Cubierta: TO-252

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SUD40N02-3M3P Datasheet (PDF)

..1. Size:174K vishay
sud40n02-3m3p.pdf

New ProductSUD40N02-3m3PVishay SiliconixN-Channel 20-V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)a Qg (Typ) 100 % Rg TestedRoHS 0.0033 at VGS = 10 V 40COMPLIANT 20 30 nC0.0044 at VGS = 4.5 V 40APPLICATIONS ServerTO-252DGDrain Connected to TabG D STop ViewSOrder Number:SUD40N02

5.1. Size:67K vishay
sud40n02-08.pdf

SUD40N02-08Vishay SiliconixN-Channel 20-V (D-S), 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)aD 175_C Maximum Junction TemperatureD 100% Rg Tested0.0085 @ VGS = 4.5 V 4020200.014 @ VGS = 2.5 V 40DTO-252GDrain Connected to TabG D STop ViewOrder Number: SSUD40N02-08N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA

6.1. Size:173K vishay
sud40n02.pdf

7.1. Size:84K vishay
sud40n03-18p.pdf

SUD40N03-18PNew ProductVishay SiliconixN-Channel 30-V (D-S) 175_C MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)a0.018 @ VGS = 10 V "4030300.027 @ VGS = 4.5 V "34DTO-252GDrain Connected to TabG D STop ViewOrder Number:SSUD40N03-18PN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltag

7.2. Size:66K vishay
sud40n08-16.pdf

SUD40N08-16Vishay SiliconixN-Channel 80-V (D-S) 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D 175_C Maximum Junction TemperatureD 100% Rg Tested80 0.016 @ VGS = 10 V 40DTO-252GDrain Connected to TabG D STop ViewOrdering Information:SSUD40N08-16SUD40N08-16E3 (Lead Free) N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (

7.3. Size:49K vishay
sud40n04-10a.pdf

SUD40N04-10ANew ProductVishay SiliconixN-Channel 40-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)a0.010 @ VGS = 10 V 40400.014 @ VGS = 4.5 V 40DTO-252GDrain Connected to TabG D STop ViewSOrder Number: N-Channel MOSFETSUD40N04-10AABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Volta

7.4. Size:68K vishay
sud40n06-25l.pdf

SUD40N06-25LVishay SiliconixN-Channel 60-V (D-S), 175_C MOSFET, Logic LevelFEATURESPRODUCT SUMMARYPb-freeD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)aAvailableD 175_C Maximum Junction0.022 @ VGS = 10 V 30Temperature60600.025 @ VGS = 4.5 V 30D 100% Rg TestedDTO-252GDrain Connected to TabSG D STop View N-Channel MOSFETOrdering Information: SUD4

7.5. Size:1358K cn vbsemi
sud40n08.pdf

SUD40N08www.VBsemi.twN-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.0055 at VGS = 10 V 75a80 0.0088 at VGS = 6.0 V 65a 17.1 nCAPPLICATIONS0.0115 at VGS = 5.0 V 54 Primary Side Switching Synchronous RectificationTO-252D DC/AC Inverters LED Backlighti

7.6. Size:770K cn vbsemi
sud40n06-25l.pdf

SUD40N06-25Lwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwis

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