SUD40N10-25 Todos los transistores

 ..1. Size:140K  vishay
 sud40n10-25.pdf

SUD40N10-25 Vishay Siliconix N-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Available 175 C Maximum Junction Temperature 0.025 at VGS = 10 V 40 RoHS* 100 100 % Rg Tested 0.028 at VGS = 4.5 V COMPLIANT 38 TO-252 D G Drain Connected to Tab G D S Top View S Ordering Information SUD40N1

 ..2. Size:867K  cn vbsemi
 sud40n10-25.pdf

SUD40N10-25 www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.030 at VGS = 10 V 40 RoHS* 100 Low Thermal Resistance Package 0.035 at VGS = 4.5 V 37 COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, un

 6.1. Size:140K  vishay
 sud40n10.pdf

SUD40N10-25 Vishay Siliconix N-Channel 100-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Available 175 C Maximum Junction Temperature 0.025 at VGS = 10 V 40 RoHS* 100 100 % Rg Tested 0.028 at VGS = 4.5 V COMPLIANT 38 TO-252 D G Drain Connected to Tab G D S Top View S Ordering Information SUD40N1

 8.1. Size:67K  vishay
 sud40n02-08.pdf

SUD40N02-08 Vishay Siliconix N-Channel 20-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)a D 175_C Maximum Junction Temperature D 100% Rg Tested 0.0085 @ VGS = 4.5 V 40 20 20 0.014 @ VGS = 2.5 V 40 D TO-252 G Drain Connected to Tab G D S Top View Order Number S SUD40N02-08 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA

 8.2. Size:84K  vishay
 sud40n03-18p.pdf

SUD40N03-18P New Product Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A)a 0.018 @ VGS = 10 V "40 30 30 0.027 @ VGS = 4.5 V "34 D TO-252 G Drain Connected to Tab G D S Top View Order Number S SUD40N03-18P N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Voltag

 8.3. Size:173K  vishay
 sud40n02.pdf

New Product SUD40N02-3m3P Vishay Siliconix N-Channel 20-V (D-S), 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Qg (Typ) 100 % Rg Tested RoHS 0.0033 at VGS = 10 V 40 COMPLIANT 20 30 nC 0.0044 at VGS = 4.5 V 40 APPLICATIONS Server TO-252 D G Drain Connected to Tab G D S Top View S Order Number SUD40N02

 8.4. Size:66K  vishay
 sud40n08-16.pdf

SUD40N08-16 Vishay Siliconix N-Channel 80-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D 175_C Maximum Junction Temperature D 100% Rg Tested 80 0.016 @ VGS = 10 V 40 D TO-252 G Drain Connected to Tab G D S Top View Ordering Information S SUD40N08-16 SUD40N08-16 E3 (Lead Free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (

 8.5. Size:49K  vishay
 sud40n04-10a.pdf

SUD40N04-10A New Product Vishay Siliconix N-Channel 40-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A)a 0.010 @ VGS = 10 V 40 40 0.014 @ VGS = 4.5 V 40 D TO-252 G Drain Connected to Tab G D S Top View S Order Number N-Channel MOSFET SUD40N04-10A ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Volta

 8.6. Size:174K  vishay
 sud40n02-3m3p.pdf

New Product SUD40N02-3m3P Vishay Siliconix N-Channel 20-V (D-S), 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Qg (Typ) 100 % Rg Tested RoHS 0.0033 at VGS = 10 V 40 COMPLIANT 20 30 nC 0.0044 at VGS = 4.5 V 40 APPLICATIONS Server TO-252 D G Drain Connected to Tab G D S Top View S Order Number SUD40N02

 8.7. Size:68K  vishay
 sud40n06-25l.pdf

SUD40N06-25L Vishay Siliconix N-Channel 60-V (D-S), 175_C MOSFET, Logic Level FEATURES PRODUCT SUMMARY Pb-free D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)a Available D 175_C Maximum Junction 0.022 @ VGS = 10 V 30 Temperature 60 60 0.025 @ VGS = 4.5 V 30 D 100% Rg Tested D TO-252 G Drain Connected to Tab S G D S Top View N-Channel MOSFET Ordering Information SUD4

 8.8. Size:1358K  cn vbsemi
 sud40n08.pdf

SUD40N08 www.VBsemi.tw N-Channel 80 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.0055 at VGS = 10 V 75a 80 0.0088 at VGS = 6.0 V 65a 17.1 nC APPLICATIONS 0.0115 at VGS = 5.0 V 54 Primary Side Switching Synchronous Rectification TO-252 D DC/AC Inverters LED Backlighti

 8.9. Size:770K  cn vbsemi
 sud40n06-25l.pdf

SUD40N06-25L www.VBsemi.tw N-Channel 6 0-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.025 at VGS = 10 V 35 RoHS* 60 0.030 at VGS = 4.5 V 30 COMPLIANT TO-252 D G Drain Connected to Tab G D S S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwis