SUD40N10-25 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SUD40N10-25
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 136 W
Voltaje máximo drenador - fuente |Vds|: 100 V
Voltaje máximo fuente - puerta |Vgs|: 20 V
Corriente continua de drenaje |Id|: 40 A
Temperatura máxima de unión (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 3 V
Carga de la puerta (Qg): 40 nC
Tiempo de subida (tr): 40 nS
Conductancia de drenaje-sustrato (Cd): 290 pF
Resistencia entre drenaje y fuente RDS(on): 0.025 Ohm
Paquete / Cubierta: TO-252
Búsqueda de reemplazo de MOSFET SUD40N10-25
SUD40N10-25 Datasheet (PDF)
sud40n10-25.pdf
SUD40N10-25Vishay SiliconixN-Channel 100-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)Available 175 C Maximum Junction Temperature0.025 at VGS = 10 V 40RoHS*100 100 % Rg Tested0.028 at VGS = 4.5 V COMPLIANT38TO-252 DGDrain Connected to Tab G D S Top View SOrdering Information: SUD40N1
sud40n10-25.pdf
SUD40N10-25www.VBsemi.twN-Channel 100-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.030 at VGS = 10 V40RoHS*100 Low Thermal Resistance Package0.035 at VGS = 4.5 V37COMPLIANTDTO-252GG D STop ViewSN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, un
sud40n10.pdf
SUD40N10-25Vishay SiliconixN-Channel 100-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)Available 175 C Maximum Junction Temperature0.025 at VGS = 10 V 40RoHS*100 100 % Rg Tested0.028 at VGS = 4.5 V COMPLIANT38TO-252 DGDrain Connected to Tab G D S Top View SOrdering Information: SUD40N1
sud40n02-08.pdf
SUD40N02-08Vishay SiliconixN-Channel 20-V (D-S), 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)aD 175_C Maximum Junction TemperatureD 100% Rg Tested0.0085 @ VGS = 4.5 V 4020200.014 @ VGS = 2.5 V 40DTO-252GDrain Connected to TabG D STop ViewOrder Number: SSUD40N02-08N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA
sud40n03-18p.pdf
SUD40N03-18PNew ProductVishay SiliconixN-Channel 30-V (D-S) 175_C MOSFETPRODUCT SUMMARYVDS (V) rDS(on) (W) ID (A)a0.018 @ VGS = 10 V "4030300.027 @ VGS = 4.5 V "34DTO-252GDrain Connected to TabG D STop ViewOrder Number:SSUD40N03-18PN-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltag
sud40n02.pdf
New ProductSUD40N02-3m3PVishay SiliconixN-Channel 20-V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)a Qg (Typ) 100 % Rg TestedRoHS 0.0033 at VGS = 10 V 40COMPLIANT 20 30 nC0.0044 at VGS = 4.5 V 40APPLICATIONS ServerTO-252DGDrain Connected to TabG D STop ViewSOrder Number:SUD40N02
sud40n08-16.pdf
SUD40N08-16Vishay SiliconixN-Channel 80-V (D-S) 175_C MOSFETFEATURESPRODUCT SUMMARYD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)D 175_C Maximum Junction TemperatureD 100% Rg Tested80 0.016 @ VGS = 10 V 40DTO-252GDrain Connected to TabG D STop ViewOrdering Information:SSUD40N08-16SUD40N08-16E3 (Lead Free) N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (
sud40n04-10a.pdf
SUD40N04-10ANew ProductVishay SiliconixN-Channel 40-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)a0.010 @ VGS = 10 V 40400.014 @ VGS = 4.5 V 40DTO-252GDrain Connected to TabG D STop ViewSOrder Number: N-Channel MOSFETSUD40N04-10AABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Volta
sud40n02-3m3p.pdf
New ProductSUD40N02-3m3PVishay SiliconixN-Channel 20-V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)a Qg (Typ) 100 % Rg TestedRoHS 0.0033 at VGS = 10 V 40COMPLIANT 20 30 nC0.0044 at VGS = 4.5 V 40APPLICATIONS ServerTO-252DGDrain Connected to TabG D STop ViewSOrder Number:SUD40N02
sud40n06-25l.pdf
SUD40N06-25LVishay SiliconixN-Channel 60-V (D-S), 175_C MOSFET, Logic LevelFEATURESPRODUCT SUMMARYPb-freeD TrenchFETr Power MOSFETVDS (V) rDS(on) (W) ID (A)aAvailableD 175_C Maximum Junction0.022 @ VGS = 10 V 30Temperature60600.025 @ VGS = 4.5 V 30D 100% Rg TestedDTO-252GDrain Connected to TabSG D STop View N-Channel MOSFETOrdering Information: SUD4
sud40n08.pdf
SUD40N08www.VBsemi.twN-Channel 80 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () Max. ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.0055 at VGS = 10 V 75a80 0.0088 at VGS = 6.0 V 65a 17.1 nCAPPLICATIONS0.0115 at VGS = 5.0 V 54 Primary Side Switching Synchronous RectificationTO-252D DC/AC Inverters LED Backlighti
sud40n06-25l.pdf
SUD40N06-25Lwww.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwis
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