SUD50N06-09L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SUD50N06-09LVishay SiliconixN-Channel 60 V (D-S), 175 C MOSFET, Logic LevelFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.0093 at VGS = 10 V 50 Material categorization:600.0122 at VGS = 4.5 V 50 For definitions of compliance please see www.vishay.com/doc?99912TO-252DGDrain Connected

SUD50N06-09Lwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Lim

New ProductSUD50N06-07LVishay SiliconixN-Channel 60-V (D-S), 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSV(BR)DSS (V) rDS(on) ()ID (A)c 175 C Junction Temperature0.0074 at VGS = 10 V RoHS 9660COMPLIANT 0.0088 at VGS = 4.5 V 88DTO-252GDrain Connected to TabG D STop ViewSOrdering Information: SUD50N06-07L-E3 (Lead (Pb)-

New ProductSUD50N06-08HVishay SiliconixN-Channel 60-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)c Qg (Typ) 175 C Junction Temperature0.0078 at VGS = 10 V RoHS 60 93 94 100 % Rg Tested COMPLIANT High Threshold at High TemperatureTO-252DGDrain Connected to TabG D STop ViewSOrdering In

SUD50N06-09LVishay SiliconixN-Channel 60 V (D-S), 175 C MOSFET, Logic LevelFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.0093 at VGS = 10 V 50RoHS*600.0122 at VGS = 4.5 V 50 COMPLIANTTO-252DGDrain Connected to TabG D STop ViewSOrdering Information: SUD50N06-09LSUD50N06