SUD50N10-34P Todos los transistores

 ..1. Size:127K  vishay
 sud50n10-34p sud50n10.pdf

New Product SUD50N10-34P Vishay Siliconix N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Qg (Typ) 100 % UIS Tested RoHS 0.034 at VGS = 10 V 20 100 24 nC COMPLIANT 0.040 at VGS = 6.0 V 20 APPLICATIONS LCD TV Inverter LCD Backlight TO-252 D G Drain Connected to Tab G D S Top View S Orde

 ..2. Size:1465K  cn vbsemi
 sud50n10-34p.pdf

SUD50N10-34P www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg and UIS Tested 0.0185 at VGS = 10 V 100 60 38 nC APPLICATIONS Primary Side Switch Isolated DC/DC Converter TO-252 D G S G D S Top View N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unles

 5.1. Size:159K  vishay
 sud50n10-18p.pdf

SUD50N10-18P Vishay Siliconix N-Channel 100 V (D-S), 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg and UIS Tested 0.0185 at VGS = 10 V 100 50 48 nC Material categorization For definitions of compliance please see www.vishay.com/doc?99912 TO-252 APPLICATIONS D Primary Side Switch Is

 8.1. Size:95K  vishay
 sud50n03-07.pdf

SUD50N03-07 Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A) D 175_C Maximum Junction Temperature D 100% Rg Tested 0.007 @ VGS = 10 V 20 30 30 0.010 @ VGS = 4.5 V 16 D TO-252 G Drain Connected to Tab G D S Top View Ordering Information S SUD50N03-07 SUD50N03-07 E3 ( Lead Free) N-Channel MOS

 8.2. Size:173K  vishay
 sud50n04-37p.pdf

New Product SUD50N04-37P Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested RoHS 0.037 at VGS = 10 V 8 40 5.3 nC COMPLIANT 0.046 at VGS = 4.5 V 8 APPLICATIONS Backlight Inverter for LCD Display Full Bridge DC/DC Converter TO-252 D G Drain Connected t

 8.3. Size:141K  vishay
 sud50n03-11.pdf

SUD50N03-11 Vishay Siliconix N-Channel 30-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a 175 C Maximum Junction Temperature RoHS 0.011 at VGS = 10 V 50 COMPLIANT 30 100 % Rg Tested 0.017 at VGS = 4.5 V 43 D TO-252 G Drain Connected to Tab G D S S Top View Ordering Information SUD50N03-11-E3 (Lead

 8.4. Size:69K  vishay
 sud50n06-07l.pdf

New Product SUD50N06-07L Vishay Siliconix N-Channel 60-V (D-S), 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( ) ID (A)c 175 C Junction Temperature 0.0074 at VGS = 10 V RoHS 96 60 COMPLIANT 0.0088 at VGS = 4.5 V 88 D TO-252 G Drain Connected to Tab G D S Top View S Ordering Information SUD50N06-07L-E3 (Lead (Pb)-

 8.5. Size:143K  vishay
 sud50n02-04p.pdf

SUD50N02-04P Vishay Siliconix N-Channel 20 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a 175 C Junction Temperature 0.0043 at VGS = 10 V 34 PWM Optimized for High Efficiency 20 0.006 at VGS = 4.5 V 28 Material categorization For definitions of compliance please see www.vishay.com/doc?99912 TO-25

 8.6. Size:105K  vishay
 sud50n025-09bp.pdf

SUD50N025-09BP New Product Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)a, e Qg (Typ) D 100% Rg Tested D RoHS Compliant 0.0086 @ VGS = 10 V 62 RoHS 25 18 5 nC 25 18.5 nC COMPLIANT 0.012 @ VGS = 4.5 V 52 APPLICATIONS D DC/DC Conversion, High-Side Desktop PC TO-252 D G Drain Connected to Tab G D

 8.7. Size:65K  vishay
 sud50n02-06.pdf

SUD50N02-06 Vishay Siliconix N-Channel 20-V (D-S), 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)a, b D 175_C Maximum Junction Temperature D 100% Rg Tested 0.006 @ VGS = 4.5 V 30 20 20 0.009 @ VGS = 2.5 V 25 D TO-252 G Drain Connected to Tab G D S Top View Order Number S SUD50N02-06 N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T

 8.8. Size:146K  vishay
 sud50n04-16p.pdf

SUD50N04-16P Vishay Siliconix N-Channel 40-V (D-S), 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, c Qg (Typ.) 100 % Rg and UIS Tested RoHS 0.016 at VGS = 10 V 20 COMPLIANT 40 15.6 nC 0.018 at VGS = 4.5 V 20 APPLICATIONS LCD TV Inverter Secondary Synchronous Rectification TO-252 D G Drain Connected to

 8.9. Size:58K  vishay
 sud50n02-09p.pdf

SUD50N02-09P Vishay Siliconix N-Channel 20-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D 175_C Junction Temperature VDS (V) rDS(on) (W) ID (A)a D PWM Optimized for High Efficiency D 100% Rg Tested 0.0095 @ VGS = 10 V 20 20 20 0.017 @ VGS = 4.5 V 15 APPLICATIONS D High-Side Synchronous Buck DC/DC Conversion - Desktop D TO-252 - Server G Drain Conn

 8.10. Size:177K  vishay
 sud50n04-8m8p.pdf

SUD50N04-8m8P Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0088 at VGS = 10 V 50 TrenchFET Power MOSFET 40 16 nC 0.0105 at VGS = 4.5 V 50 100 % UIS Tested 100 % Rg Tested PWM Optimized Compliant to RoHS Directive 2002/95/EC A

 8.11. Size:63K  vishay
 sud50n03-06p.pdf

SUD50N03-06P Vishay Siliconix N-Channel 30-V (D-S) 175 _C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D 175 _C Junction Temperature VDS (V) rDS(on) (W) ID (A)b D Optimized for Low-Side Synchronous Rectifier * Operation 0.0065 at VGS = 10 V 84b 30 30 D 100 % Rg Tested 0.0095 at VGS = 4.5 V 59b APPLICATIONS D DC/DC Converters D Synchronous Rectifiers TO-252 D Dr

 8.12. Size:69K  vishay
 sud50n04-05l.pdf

New Product SUD50N04-05L Vishay Siliconix N-Channel 40-V (D-S), 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS V(BR)DSS (V) rDS(on) ( ) ID (A)c 175 C Junction Temperature 0.0054 at VGS = 10 V RoHS 115 40 COMPLIANT 0.0069 at VGS = 4.5 V 102 D TO-252 G Drain Connected to Tab G D S Top View S Ordering Information SUD50N04-05L-E3 (Lead (Pb)

 8.13. Size:93K  vishay
 sud50n03-7m3p.pdf

SUD50N03-7m3P New Product Vishay Siliconix N-Channel 30-V (D-S) WFET FEATURES PRODUCT SUMMARY Low Qgd WFET Technology VDS (V) rDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested 0.0073 at VGS = 10 V 50 RoHS 30 15.7 nC COMPLIANT 0.0087 at VGS = 4.5 V 50 APPLICATIONS DC/DC Conversion, High-Side - Notebook CPU core TO-252 - VRM D Drain Connected to T

 8.14. Size:103K  vishay
 sud50n025-06p.pdf

SUD50N025-06P New Product Vishay Siliconix N-Channel 25-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)a, e Qg (Typ) D 100% Rg Tested D RoHS Compliant 0.0062 @ VGS = 10 V 78 25 20 5 nC 25 20.5 nC 0.010 @ VGS = 4.5 V 62 APPLICATIONS D DC/DC Conversion, Low-Side - Desktop PC TO-252 D G Drain Connected to Tab G D S Top View S Ord

 8.15. Size:135K  vishay
 sud50np0494.pdf

SUD50NP04-94 New Product Vishay Siliconix Complementary N- and P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Qg (Typ) 100 % Rg and UIS Tested RoHS 0.041 at VGS = 10 V 8 N-Channel 40 8 COMPLIANT 0.045 at VGS = 4.5 V 8 APPLICATIONS 0.053 at VGS = - 10 V - 8 CCFL Inverter P-Channel - 40 9 0.072 at VG

 8.16. Size:75K  vishay
 sud50n04-09h.pdf

SUD50N04-09H Vishay Siliconix N-Channel 40-V (D-S), 175 C MOSFET FEATURES TrenchFET Power MOSFETS PRODUCT SUMMARY 175 C Junction Temperature V(BR)DSS (V) rDS(on) ( ) ID (A)c Qg (Typ) RoHS High Threshold Voltage At High Temperature COMPLIANT 0.009 at VGS = 10 V 40 50 55 TO-252 D G Drain Connected to Tab G D S Top View S Ordering Information SUD50N04-

 8.17. Size:59K  vishay
 sud50n024-09p.pdf

SUD50N024-09P Vishay Siliconix N-Channel 22-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D 175_C Junction Temperature VDS (V) rDS(on) (W) ID (A)d D PWM Optimized for High Efficiency 0.0095 @ VGS = 10 V 49 24c 24c APPLICATIONS 0.017 @ VGS = 4.5 V 36 D High-Side Synchronous Buck DC/DC D Conversion TO-252 - Desktop - Server G Drain Connected to Tab

 8.18. Size:263K  vishay
 sud50np04.pdf

New Product SUD50NP04-77P Vishay Siliconix Complementary N- and P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested RoHS 0.037 at VGS = 10 V 8 COMPLIANT N-Channel 40 26 0.046 at VGS = 4.5 V 8 APPLICATIONS 0.040 at VGS = - 10 V - 8 Backlight Inverter for LCD Display P-Channel

 8.19. Size:70K  vishay
 sud50n06-08h.pdf

New Product SUD50N06-08H Vishay Siliconix N-Channel 60-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)c Qg (Typ) 175 C Junction Temperature 0.0078 at VGS = 10 V RoHS 60 93 94 100 % Rg Tested COMPLIANT High Threshold at High Temperature TO-252 D G Drain Connected to Tab G D S Top View S Ordering In

 8.20. Size:148K  vishay
 sud50n03.pdf

SUD50N03-09P Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)b Available Optimized for High- or Low-Side 0.0095 at VGS = 10 V 63b RoHS* 100 % Rg Tested 30 COMPLIANT 0.014 at VGS = 4.5 V 52b APPLICATIONS DC/DC Converters Synchronous Rectifiers TO-252 D Drain Connected to T

 8.21. Size:73K  vishay
 sud50n03-16p.pdf

SUD50N03-16P New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D PWM Optimized VDS (V) rDS(on) (W) ID (A)a D 100% Rg Tested 0.016 @ VGS = 10 V 15 APPLICATIONS 30 30 0.024 @ VGS = 4.5 V 12 D High-Side DC/DC - Desktop - Server D D DDR DC/DC Converter TO-252 G Drain Connected to Tab G D S Top View S Ordering Inform

 8.22. Size:160K  vishay
 sud50n04.pdf

SUD50N04-8m8P Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) Definition 0.0088 at VGS = 10 V 50 TrenchFET Power MOSFET 40 16 nC 0.0105 at VGS = 4.5 V 50 100 % UIS Tested 100 % Rg Tested PWM Optimized Compliant to RoHS Directive 2002/95/EC A

 8.23. Size:137K  vishay
 sud50np04-62.pdf

SUD50NP04-62 New Product Vishay Siliconix Complementary N- and P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Qg (Typ) 100 % Rg and UIS Tested RoHS 0.030 at VGS = 10 V 8 COMPLIANT N-Channel 40 9.6 0.034 at VGS = 4.5 V 8 APPLICATIONS 0.032 at VGS = - 10 V - 8 CCFL Inverter P-Channel - 40 21 0.041 a

 8.24. Size:71K  vishay
 sud50n06.pdf

SUD50N06-09L Vishay Siliconix N-Channel 60 V (D-S), 175 C MOSFET, Logic Level FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Available 175 C Junction Temperature 0.0093 at VGS = 10 V 50 RoHS* 60 0.0122 at VGS = 4.5 V 50 COMPLIANT TO-252 D G Drain Connected to Tab G D S Top View S Ordering Information SUD50N06-09L SUD50N06

 8.25. Size:157K  vishay
 sud50n06-09l.pdf

SUD50N06-09L Vishay Siliconix N-Channel 60 V (D-S), 175 C MOSFET, Logic Level FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.0093 at VGS = 10 V 50 Material categorization 60 0.0122 at VGS = 4.5 V 50 For definitions of compliance please see www.vishay.com/doc?99912 TO-252 D G Drain Connected

 8.26. Size:149K  vishay
 sud50n03-09p.pdf

SUD50N03-09P Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)b Available Optimized for High- or Low-Side 0.0095 at VGS = 10 V 63b RoHS* 100 % Rg Tested 30 COMPLIANT 0.014 at VGS = 4.5 V 52b APPLICATIONS DC/DC Converters Synchronous Rectifiers TO-252 D Drain Connected to T

 8.27. Size:108K  vishay
 sud50n03-10.pdf

SUD50N03-10 Siliconix N-Channel 30-V (D-S), 175_C MOSFET Product Summary VDS (V) rDS(on) (W) ID (A) 0.010 @ VGS = 10 V "15 30 30 0.019 @ VGS = 4.5 V "12 D TO-252 G Drain Connected to Tab G D S Top View Order Number S SUD50N03-10 N-Channel MOSFET Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage VDS 30 V V Gate-

 8.28. Size:157K  vishay
 sud50n03-12p.pdf

SUD50N03-12P Vishay Siliconix N-Channel 30 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a 100 % Rg and UIS Tested 0.0120 at VGS = 10 V 17.5 Compliant to RoHS Directive 2002/95/EC 30 0.0175 at VGS = 4.5 V 14.5 TO-252 D G Drain Connected to Tab G D S Top View S Ordering Information SUD50N03-12P-E3 (Lead (PB) fr

 8.29. Size:90K  vishay
 sud50n03-06ap.pdf

SUD50N03-06AP New Product Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)a, e Qg (Typ) D Optimized for Low Side Synchronous Rectifier Operation 0.0057 @ VGS = 10 V 90 RoHS 30 30 30 30 COMPLIANT D 100% Rg Tested 0.0078 @ VGS = 4.5 V 77 APPLICATIONS D DC/DC Converters D Synchronous Rectifiers TO-252 D

 8.30. Size:158K  vishay
 sud50n02-06p.pdf

SUD50N02-06P Vishay Siliconix N-Channel 20 V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a 175 C Junction Temperature 0.0060 at VGS = 10 V PWM Optimized for High Efficiency 26 20 0.0095 at VGS = 4.5 V 100 % Rg Tested 21 Compliant to RoHS Directive 2002/95/EC APPLICATIONS Synchronous Buck DC/DC C

 8.31. Size:40K  vishay
 sud50n024-06p.pdf

SUD50N024-06P New Product Vishay Siliconix N-Channel 22-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET VDS (V) rDS(on) (W) ID (A)d D 175_C Junction Temperature D PWM Optimized for High Efficiency 0.006 @ VGS = 10 V 80 24C 24C APPLICATIONS 0.0095 @ VGS = 4.5 V 64 D Synchronous Buck DC/DC Conversion - Desktop D - Server TO-252 G Drain Connected to Tab

 8.32. Size:1428K  cn vbsemi
 sud50n04-8m8p.pdf

SUD50N04-8M8P www.VBsemi.tw N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, c Qg (Typ.) 100 % Rg and UIS Tested RoHS 0.0050 at VGS = 10 V 85 COMPLIANT 40 80 nC 0.0065 at VGS = 4.5 V 70 APPLICATIONS Synchronous Rectification Power Supplies D TO-252 G G D S S N-Channel MOSFET ABSOLUTE MAXIM

 8.33. Size:899K  cn vbsemi
 sud50n06-09l.pdf

SUD50N06-09L www.VBsemi.tw N-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY 175 C Junction Temperature VDS (V) RDS(on) ( ) ID (A)a TrenchFET Power MOSFET 0.012 at VGS = 10 V 50 Material categorization 60 0.013 at VGS = 4.5 V 45 D TO-252 G S G D S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted) Parameter Symbol Lim