SUD50P04-13L Todos los transistores

 ..1. Size:80K  vishay
 sud50p04-13l.pdf

New Product SUD50P04-13L Vishay Siliconix P-Channel 40-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( )ID (A) 175 C Junction Temperature 0.013 at VGS = - 10 V - 60a RoHS - 40 COMPLIANT 0.022 at VGS = - 4.5 V - 48 S TO-252 G Drain Connected to Tab G D S Top View D Ordering Information SUD50P04-13L-E3 (Lead (Pb)-

 ..2. Size:935K  cn vbsemi
 sud50p04-13l.pdf

SUD50P04-13L www.VBsemi.tw P-Channel 4 0 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -40 Package with low thermal resistance RDS(on) ( ) at VGS = -10 V 0.012 100 % Rg and UIS tested RDS(on) ( ) at VGS = -4.5 V 0.015 ID (A) -50 Configuration Single TO-252 S G D D G S P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C,

 4.1. Size:64K  vishay
 sud50p04-15.pdf

SUD50P04-15 New Product Vishay Siliconix P-Channel 40-V (D-S), 175_C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.015 @ VGS = 10 V 50 40 40 0.023 @ VGS = 4.5 V 45 S TO-252 G Drain Connected to Tab G D S Top View Order Number D SUD50P04-15 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drai

 5.1. Size:93K  vishay
 sud50p04-23.pdf

SUD50P04-23 Vishay Siliconix P-Channel 40-V (D-S), 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg Tested RoHS 0.023 at VGS = 10 V - 20 COMPLIANT - 40 20.6 nC 0.030 at VGS = 4.5 V - 20 APPLICATIONS LCD TV Inverter TO-252 S G Drain Connected to Tab G D S Top View D P-Channel MOSFET Ordering

 5.2. Size:174K  vishay
 sud50p04-40p.pdf

New Product SUD50P04-40P Vishay Siliconix P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested RoHS 0.040 at VGS = - 10 V - 8 COMPLIANT - 40 17 nC 0.050 at VGS = - 4.5 V - 8 APPLICATIONS Backlight Inverter for LCD Display Full Bridge DC/DC Converter S TO-252 G Drain Connec

 5.3. Size:88K  vishay
 sud50p04-09l.pdf

SUD50P04-09L Vishay Siliconix P-Channel 40 V (D-S), 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETs VDS (V) RDS(on) ( ) ID (A)d 175 C Junction Temperature 0.0094 at VGS = - 10 V - 50 Compliant to RoHS Directive 2002/95/EC - 40 0.0145 at VGS = - 4.5 V - 50 S TO-252 G Drain Connected to Tab G D S Top View D Ordering Information SUD50P04

 5.4. Size:165K  vishay
 sud50p04-08.pdf

SUD50P04-08 www.vishay.com Vishay Siliconix P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (TYP.) 100 % Rg and UIS tested 0.0081 at VGS = -10 V -50 d -40 60 Material categorization 0.0117 at VGS = -4.5 V -48 d for definitions of compliance please see www.vishay.com/doc?99912 TO-252 TO APPLICATIONS

 5.5. Size:889K  cn vbsemi
 sud50p04-09l-e3.pdf

 5.6. Size:1492K  cn vbsemi
 sud50p04-08.pdf

SUD50P04-08 www.VBsemi.tw P-Channel 4 0 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -40 Package with low thermal resistance RDS(on) ( ) at VGS = -10 V 0.012 100 % Rg and UIS tested RDS(on) ( ) at VGS = -4.5 V 0.015 ID (A) -50 Configuration Single TO-252 S G D D G S P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C,

 5.7. Size:206K  inchange semiconductor
 sud50p04-08.pdf

INCHANGE Semiconductor Isc P-Channel MOSFET Transistor SUD50P04-08 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Motor contorl DC-DC conventers ABSOLUTE MAXIMUM RATINGS