SUD50P08-26 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SUD50P08-26
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 136 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 80 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 50 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 50 nS
Cossⓘ - Capacitancia de salida: 320 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm
Encapsulados: TO-252
Búsqueda de reemplazo de SUD50P08-26 MOSFET
- Selecciónⓘ de transistores por parámetros
SUD50P08-26 datasheet
..1. Size:82K vishay
sud50p08-26.pdf 
New Product SUD50P08-26 Vishay Siliconix P-Channel 80-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Qg (Typ) RoHS 0.026 at VGS = - 10 V - 50 102 nC - 80 COMPLIANT TO-252 S G Drain Connected to Tab G D S Top View D Ordering Information SUD50P08-26-E3 (Lead (Pb)-free) P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA =
4.1. Size:82K vishay
sud50p08-25l.pdf
New Product SUD50P08-25L Vishay Siliconix P-Channel 80-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Qg (Typ) RoHS 0.0252 at VGS = - 10 V - 50 COMPLIANT - 80 55 nC 0.029 at VGS = - 4.5 V - 47 TO-252 S G Drain Connected to Tab G D S Top View D Ordering Information SUD50P08-25L-E3 (Lead (Pb)-free) P-Channel MOSFET
7.1. Size:80K vishay
sud50p04-13l.pdf
New Product SUD50P04-13L Vishay Siliconix P-Channel 40-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( )ID (A) 175 C Junction Temperature 0.013 at VGS = - 10 V - 60a RoHS - 40 COMPLIANT 0.022 at VGS = - 4.5 V - 48 S TO-252 G Drain Connected to Tab G D S Top View D Ordering Information SUD50P04-13L-E3 (Lead (Pb)-
7.2. Size:64K vishay
sud50p04-15.pdf
SUD50P04-15 New Product Vishay Siliconix P-Channel 40-V (D-S), 175_C MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (W) ID (A) 0.015 @ VGS = 10 V 50 40 40 0.023 @ VGS = 4.5 V 45 S TO-252 G Drain Connected to Tab G D S Top View Order Number D SUD50P04-15 P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drai
7.3. Size:93K vishay
sud50p04-23.pdf
SUD50P04-23 Vishay Siliconix P-Channel 40-V (D-S), 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a Qg (Typ.) 100 % Rg Tested RoHS 0.023 at VGS = 10 V - 20 COMPLIANT - 40 20.6 nC 0.030 at VGS = 4.5 V - 20 APPLICATIONS LCD TV Inverter TO-252 S G Drain Connected to Tab G D S Top View D P-Channel MOSFET Ordering
7.4. Size:154K vishay
sud50p06-15.pdf
SUD50P06-15 Vishay Siliconix P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Material categorization 0.015 at VGS = - 10 V For definitions of compliance please see - 50d - 60 www.vishay.com/doc?99912 0.020 at VGS = - 4.5 V - 50d APPLICATIONS TO-252 Load Switch S G Drain Connected to Tab D G S Top V
7.5. Size:174K vishay
sud50p04-40p.pdf
New Product SUD50P04-40P Vishay Siliconix P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a Qg (Typ.) 100 % UIS Tested RoHS 0.040 at VGS = - 10 V - 8 COMPLIANT - 40 17 nC 0.050 at VGS = - 4.5 V - 8 APPLICATIONS Backlight Inverter for LCD Display Full Bridge DC/DC Converter S TO-252 G Drain Connec
7.6. Size:120K vishay
sud50p06.pdf
SUD50P06-15 Vishay Siliconix P-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free VDS (V) RDS(on) ( )ID (A) TrenchFET Power MOSFET RoHS 0.015 at VGS = - 10 V - 50d COMPLIANT - 60 0.020 at VGS = - 4.5 V - 50d APPLICATIONS Load Switch S TO-252 G Drain Connected to Tab G D S Top View D P-Channel MOSFET Ordering Information SUD50P06-15-GE
7.7. Size:88K vishay
sud50p04-09l.pdf
SUD50P04-09L Vishay Siliconix P-Channel 40 V (D-S), 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETs VDS (V) RDS(on) ( ) ID (A)d 175 C Junction Temperature 0.0094 at VGS = - 10 V - 50 Compliant to RoHS Directive 2002/95/EC - 40 0.0145 at VGS = - 4.5 V - 50 S TO-252 G Drain Connected to Tab G D S Top View D Ordering Information SUD50P04
7.8. Size:70K vishay
sud50p06-15l.pdf
SUD50P06-15L Vishay Siliconix P-Channel 60 V (D-S), 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) 175 C Junction Temperature RoHS 0.015 at VGS = - 10 V - 50d - 60 COMPLIANT Compliant to RoHS Directive 2002/95/EC 0.020 at VGS = - 4.5 V - 50 S TO-252 G Drain Connected to Tab G D S Top View D Ordering Informa
7.9. Size:165K vishay
sud50p04-08.pdf
SUD50P04-08 www.vishay.com Vishay Siliconix P-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) RDS(on) ( )ID (A) Qg (TYP.) 100 % Rg and UIS tested 0.0081 at VGS = -10 V -50 d -40 60 Material categorization 0.0117 at VGS = -4.5 V -48 d for definitions of compliance please see www.vishay.com/doc?99912 TO-252 TO APPLICATIONS
7.10. Size:935K cn vbsemi
sud50p04-13l.pdf
SUD50P04-13L www.VBsemi.tw P-Channel 4 0 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -40 Package with low thermal resistance RDS(on) ( ) at VGS = -10 V 0.012 100 % Rg and UIS tested RDS(on) ( ) at VGS = -4.5 V 0.015 ID (A) -50 Configuration Single TO-252 S G D D G S P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C,
7.11. Size:881K cn vbsemi
sud50p06-15.pdf
SUD50P06-15 www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Material categorization 0.020 at VGS = - 10 V - 50 - 60 0.025 at VGS = - 4.5 V - 45 APPLICATIONS Load Switch TO-252 S G D G S D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Paramete
7.12. Size:819K cn vbsemi
sud50p06-15l-ge3.pdf
SUD50P06-15L-GE3 www.VBsemi.tw P-Channel 60 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( )ID (A) Material categorization 0.020 at VGS = - 10 V - 50 - 60 0.025 at VGS = - 4.5 V - 45 APPLICATIONS Load Switch TO-252 S G D G S D Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (TA = 25 C, unless otherwise noted) Par
7.14. Size:1492K cn vbsemi
sud50p04-08.pdf
SUD50P04-08 www.VBsemi.tw P-Channel 4 0 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET power MOSFET VDS (V) -40 Package with low thermal resistance RDS(on) ( ) at VGS = -10 V 0.012 100 % Rg and UIS tested RDS(on) ( ) at VGS = -4.5 V 0.015 ID (A) -50 Configuration Single TO-252 S G D D G S P-Channel MOSFET Top View ABSOLUTE MAXIMUM RATINGS (TC = 25 C,
7.15. Size:254K inchange semiconductor
sud50p06-15.pdf
Isc P-Channel MOSFET Transistor SUD50P06-15 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Motor contorl DC-DC conventers ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PA
7.16. Size:206K inchange semiconductor
sud50p04-08.pdf
INCHANGE Semiconductor Isc P-Channel MOSFET Transistor SUD50P04-08 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications Motor contorl DC-DC conventers ABSOLUTE MAXIMUM RATINGS
Otros transistores... SUD50P04-09L
, SUD50P04-13L
, SUD50P04-15
, SUD50P04-23
, SUD50P04-40P
, SUD50P06-15
, SUD50P06-15L
, SUD50P08-25L
, 50N06
, SUD50P10-43
, SUD50P10-43L
, SUM09N20-270
, SUM110N03-03P
, SUM110N03-04P
, SUM110N04-03
, SUM110N04-03P
, SUM110N04-04
.
History: G30N04D3
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