IXTH20N60 MOSFET. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

IXTH20N60 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTH20N60

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 20 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 43 nS

Cossⓘ - Capacitancia de salida: 420 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.35 Ohm

Encapsulados: TO247

Búsqueda de reemplazo de IXTH20N60 MOSFET

- Selecciónⓘ de transistores por parámetros

IXTH20N60 datasheet

..1. Size:316K ixys
ixth15n60 ixtm15n60 ixth20n60 ixtm20n60.pdf pdf_icon

Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine Downloaded from DatasheetLib.com - datasheet search engine

..2. Size:105K ixys
ixth20n60 ixtm20n60.pdf pdf_icon

IXTH 20N60 VDSS = 600 V MegaMOSTMFET IXTM 20N60 ID25 = 20 A RDS(on) = 0.35 N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings TO-247 AD (IXTH) VDSS TJ = 25 C to 150 C 600 V VDGR TJ = 25 C to 150 C; RGS = 1 M 600 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C 15N60 15 A TO-204 AE (IXTM) 20N60 20 A IDM TC = 25 C, p

6.1. Size:231K ixys
ixta20n65x ixth20n65x ixtp20n65x.pdf pdf_icon

Preliminary Technical Information X-Class VDSS = 650V IXTA20N65X Power MOSFET ID25 = 20A IXTP20N65X RDS(on) 210m IXTH20N65X N-Channel Enhancement Mode TO-263 (IXTA) G S D (Tab) Symbol Test Conditions Maximum Ratings TO-220 (IXTP) VDSS TJ = 25 C to 150 C 650 V VDGR TJ = 25 C to 150 C, RGS = 1M 650 V VGSS Continuous 30 V VG

8.1. Size:205K ixys
ixth200n085t ixtq200n085t.pdf pdf_icon

Preliminary Technical Information IXTH200N085T VDSS = 85 V TrenchMVTM IXTQ200N085T ID25 = 200 A Power MOSFET RDS(on) 5.0 m N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 (IXTH) VDSS TJ = 25 C to 175 C85 V VDGR TJ = 25 C to 175 C; RGS = 1 M 85 V VGSM Transient 20 V ID25 TC = 25 C 20

Otros transistores... IXTH15N35MA, IXTH15N35MB, IXTH15N40MA, IXTH15N40MB, IXTH15N60, IXTH20M60MB, IXTH20N55MA, IXTH20N55MB, IRF3205, IXTH20N60MA, IXTH21N50, IXTH23N25MA, IXTH23N25MB, IXTH24N45MA, IXTH24N45MB, IXTH24N50, IXTH24N50MA

IXTH20N60 Todos los transistores