SUM110N04-04 Todos los transistores

 

SUM110N04-04 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SUM110N04-04
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 250 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 40 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 110 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 115 nS
   Cossⓘ - Capacitancia de salida: 1110 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0035 Ohm
   Paquete / Cubierta: TO-263
 

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SUM110N04-04 Datasheet (PDF)

 ..1. Size:101K  vishay
 sum110n04-04.pdf pdf_icon

SUM110N04-04

SUM110N04-04Vishay SiliconixN-Channel 40-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature40 0.0035 at VGS = 10 V 110aRoHS*COMPLIANTTO-263DGG D STop ViewSOrdering Information: SUM110N04-04SUM110N04-04-E3 (Lead (Pb)-free) N-Channel MOSFETABSOLUTE MAXIMUM RA

 3.1. Size:90K  vishay
 sum110n04-05h.pdf pdf_icon

SUM110N04-04

SUM110N04-05HVishay SiliconixN-Channel 40-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) Qg (Typ.) 175 C Junction TemperatureRoHS0.0053 at VGS = 10 V 40 95110COMPLIANT High Threshold Voltage at High TemperatureDTO-263GG D STop View SN-Channel MOSFETOrdering Information: SUM110N04-05H-E

 3.2. Size:100K  vishay
 sum110n04-02l.pdf pdf_icon

SUM110N04-04

SUM110N04-02LVishay SiliconixN-Channel 40-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)Available New Package with Low Thermal Resistance 0.0023 at VGS = 10 V RoHS*40110a0.0038 at VGS = 4.5 V COMPLIANTDTO-263 GG D S Top View SOrdering Information: SUM110N04-02LSUM110N04-02L-E3 (Lead (Pb)-fr

 3.3. Size:99K  vishay
 sum110n04-03p.pdf pdf_icon

SUM110N04-04

SUM110N04-03PVishay SiliconixN-Channel 40-V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A)Available 175 C Junction Temperature0.0031 at VGS = 10 V 40110aRoHS* Package with Low Thermal ResistanceCOMPLIANT Extremely Low Qgd WFETTM Technology for Low Switching Losses 100 % Rg TestedDTO

MOSTRAR MÁS

Otros transistores... SUD50P08-26 , SUD50P10-43 , SUD50P10-43L , SUM09N20-270 , SUM110N03-03P , SUM110N03-04P , SUM110N04-03 , SUM110N04-03P , 10N60 , SUM110N04-05H , SUM110N04-2M1P , SUM110N04-2M3L , SUM110N05-06L , SUM110N06-3M4L , SUM110N06-3M9H , SUM110N08-07P , SUM110N10-09 .

History: NTB25P06G | AP6N1R7CDT | VP3203N3 | GP2M007A065XG | SPI21N50C3 | AFN1932 | AP4501AGEM-HF

 

 
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