SUM110N05-06L Todos los transistores

 ..1. Size:165K  vishay
 sum110n05-06l.pdf

SUM110N05-06L Vishay Siliconix N-Channel 55-V (D-S), 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Qg (Typ) Available 175 C Junction Temperature 0.006 at VGS = 10 V 110 RoHS* 55 65 Low Thermal Resistance Package 0.0085 at VGS = 4.5 V 92 COMPLIANT APPLICATIONS Industrial D TO-263 G G D S Top View S

 6.1. Size:90K  vishay
 sum110n04-05h.pdf

SUM110N04-05H Vishay Siliconix N-Channel 40-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Qg (Typ.) 175 C Junction Temperature RoHS 0.0053 at VGS = 10 V 40 95 110 COMPLIANT High Threshold Voltage at High Temperature D TO-263 G G D S Top View S N-Channel MOSFET Ordering Information SUM110N04-05H-E

 6.2. Size:154K  vishay
 sum110n04-2m1p.pdf

New Product SUM110N04-2m1P Vishay Siliconix N-Channel 40-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, c Qg (Typ.) 100 % Rg and UIS Tested RoHS 0.0021 at VGS = 10 V 110 COMPLIANT 40 240 nC 0.0024 at VGS = 4.5 V 110 APPLICATIONS Synchronous Rectification Power Supplies D TO-263 G G D S Top View S

 6.3. Size:101K  vishay
 sum110n04-04.pdf

SUM110N04-04 Vishay Siliconix N-Channel 40-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 40 0.0035 at VGS = 10 V 110a RoHS* COMPLIANT TO-263 D G G D S Top View S Ordering Information SUM110N04-04 SUM110N04-04-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MAXIMUM RA

 6.4. Size:167K  vishay
 sum110n06-3m4l.pdf

SUM110N06-3m4L Vishay Siliconix N-Channel 60-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( ) ID (A) 100 % Rg Tested RoHS 0.0034 at VGS = 10 V COMPLIANT 60 110a 0.0041 at VGS = 4.5 V D TO-263 G G D S Top View S N-Channel MOSFET Ordering Information SUM110N06-3m4L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS

 6.5. Size:100K  vishay
 sum110n04-02l.pdf

SUM110N04-02L Vishay Siliconix N-Channel 40-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Available New Package with Low Thermal Resistance 0.0023 at VGS = 10 V RoHS* 40 110a 0.0038 at VGS = 4.5 V COMPLIANT D TO-263 G G D S Top View S Ordering Information SUM110N04-02L SUM110N04-02L-E3 (Lead (Pb)-fr

 6.6. Size:76K  vishay
 sum110n06-3m9h.pdf

SUM110N06-3m9H Vishay Siliconix N-Channel 60-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Qg (Typ) 175 C Junction Temperature RoHS 0.0039 at VGS = 10 V 60 110a 200 COMPLIANT Low Thermal Resistance Package High Threshold Voltage At High Temperature 100 % Rg Tested D TO-263 G G D S Top Vi

 6.7. Size:99K  vishay
 sum110n04-03p.pdf

SUM110N04-03P Vishay Siliconix N-Channel 40-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Available 175 C Junction Temperature 0.0031 at VGS = 10 V 40 110a RoHS* Package with Low Thermal Resistance COMPLIANT Extremely Low Qgd WFETTM Technology for Low Switching Losses 100 % Rg Tested D TO

 6.8. Size:151K  vishay
 sum110n04-2m3l.pdf

SUM110N04-2m3L Vishay Siliconix N-Channel 40-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( ) ID (A) 100 % Rg Tested RoHS 0.0023 at VGS = 10 V COMPLIANT 40 110a 0.003 at VGS = 4.5 V D TO-263 G G D S Top View S N-Channel MOSFET Ordering Information SUM110N04-2m3L-E3 (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T

 6.9. Size:95K  vishay
 sum110n04-03.pdf

SUM110N04-03 Vishay Siliconix N-Channel 40-V (D-S) 175 C MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Available Package with Low Thermal Resistance 0.0028 at VGS = 10 V 40 110a RoHS* COMPLIANT D TO-263 G G D S Top View S Ordering Information SUM110N04-03 SUM110N04-03-E3 (Lead (Pb)-free) N-Channel MOSFET ABSOLUTE MA

 6.10. Size:69K  vishay
 sum110n03-03p.pdf

SUM110N03-03P Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET D 175_C Junction Temperature V(BR)DSS (V) rDS(on) (W) ID (A)a D Optimized for Low-Side Synchronous Rectifier 0.0026 @ VGS = 10 V 110a D 100% Rg Tested 30 30 0.004 @ VGS = 4.5 V 110a APPLICATIONS D Desktop or Server CPU Core D TO-263 DRAIN connected to TAB G G D

 6.11. Size:74K  vishay
 sum110n03-04p.pdf

SUM110N03-04P New Product Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET FEATURES D TrenchFETr Power MOSFET D 175_C Junction Temperature PRODUCT SUMMARY D Optimized for Low-Side Synchronous Rectifier Operation D New Package with Low Thermal Resistance V(BR)DSS (V) rDS(on) (W) ID (A) D 100% Rg Tested 0.0042 @ VGS = 10 V 110 30 30 0.0065 @ VGS = 4.5 V 77 APPLICATIONS D DC/DC C

 6.12. Size:165K  vishay
 sum110n08-07p.pdf

SUM110N08-07P Vishay Siliconix N-Channel 75 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.007 at VGS = 10 V 75 Material categorization 110d 69 For definitions of compliance please see www.vishay.com/doc?99912 TO-263 APPLICATIONS Synchronous Rectification D G D G S Top Vie