MIC94052BC6TR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MIC94052BC6TR
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.27 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 6 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 6 V
|Id|ⓘ - Corriente continua de drenaje: 2 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 15 nS
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.084 Ohm
Paquete / Cubierta: SOT-363
- Selección de transistores por parámetros
MIC94052BC6TR Datasheet (PDF)
mic94052bc6tr mic94052yc6tr mic94053bc6tr mic94053yc6tr.pdf

MIC94052/53 MIC94052/9405384m P-Channel MOSFET in SC-70-6General Description FeaturesThe MIC94052/94053 are low on-resistance, 84m(max) 1.8V to 5.5V input voltage rangeP-channel MOSFETs. They are housed in a Teeny SC- Low on-resistance P-channel MOSFET:70-6 package. 70m at VGS = 4.5V (typ) 2A continuous currentDesigned for high-side switch applications where
mic94052 mic94053.pdf

MIC94052/53 MIC94052/9405384m P-Channel MOSFET in SC-70-6General Description FeaturesThe MIC94052/94053 are low on-resistance, 84m(max) 1.8V to 5.5V input voltage rangeP-channel MOSFETs. They are housed in a Teeny SC- Low on-resistance P-channel MOSFET:70-6 package. 70m at VGS = 4.5V (typ) 2A continuous currentDesigned for high-side switch applications where
mic94050bm4tr mic94050ym4tr mic94051bm4tr mic94051ym4tr.pdf

MIC94050/94051 MicrelMIC94050/940514-Terminal SymFET P-Channel MOSFETGeneral DescriptionThe MIC94050 and MIC94051 are 4-terminal silicon gate SymFETP-channel MOSFETs that provide low on-resistance in a very small package. FeaturesDesigned for high-side switch applications where space is 0.125 typical on-resistance critical, the MIC94050/1 exhibits an on-resistance
mic94030bm4tr mic94030ym4tr mic94031bm4tr mic94031ym4tr.pdf

MIC94030/94031 TinyFET P-Channel MOSFET General Description Features The MIC94030 and MIC94031 are 4-terminal silicon gate 13.5V minimum drain-to-source breakdown P-channel MOSFETs that provide low on-resistance in a 0.75 typical on-resistance very small package. at 4.5V gate-to-source voltage Designed for high-side switch applications where space is 0.4
Otros transistores... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , CS150N03A8 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
History: ME2306BS-G
History: ME2306BS-G



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