SUP75P05-08 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SUP/SUB75P05-08New ProductVishay SiliconixP-Channel 55-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)55 0.008 75aTO-220ABSTO-263GDRAIN connected to TABG D S G D STop ViewTop ViewDSUB75P05-08SUP75P05-08 P-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS

SUP/SUB75P03-08Vishay SiliconixP-Channel 30-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)30 0.008 75aSTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SDSUB75P03-08Top ViewP-Channel MOSFETSUP75P03-08ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitGate-Source Voltage VGS "20 VTC = 2

SUB75P03-07, SUP75P03-07Vishay SiliconixP-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Compliant to RoHS Directive 2002/95/ECVDS (V) RDS(on) ()ID (A)aAvailable0.007 at VGS = - 10 V 75RoHS*- 30COMPLIANT0.010 at VGS = - 4.5 V 75TO-263TO-220ABSG D STop ViewDRAIN connected to TABSUB75P03-07GG D STop ViewSUP75P03-07Ordering In

SUB75P03-07, SUP75P03-07Vishay SiliconixP-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Compliant to RoHS Directive 2002/95/ECVDS (V) RDS(on) ()ID (A)aAvailable0.007 at VGS = - 10 V 75RoHS*- 30COMPLIANT0.010 at VGS = - 4.5 V 75TO-263TO-220ABSG D STop ViewDRAIN connected to TABSUB75P03-07GG D STop ViewSUP75P03-07Ordering In