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SUP75P05-08 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SUP75P05-08
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 250 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 55 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 75 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 140 nS
   Cossⓘ - Capacitancia de salida: 1220 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.008 Ohm
   Paquete / Cubierta: TO-220AB

 Búsqueda de reemplazo de MOSFET SUP75P05-08

 

SUP75P05-08 Datasheet (PDF)

 ..1. Size:71K  vishay
sup75p05-08 sup75p05-08 sub75p05-08.pdf

SUP75P05-08
SUP75P05-08

SUP/SUB75P05-08New ProductVishay SiliconixP-Channel 55-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)55 0.008 75aTO-220ABSTO-263GDRAIN connected to TABG D S G D STop ViewTop ViewDSUB75P05-08SUP75P05-08 P-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitDrain-Source Voltage VDS

 7.1. Size:55K  vishay
sup75p03-08 sub75p03-08.pdf

SUP75P05-08
SUP75P05-08

SUP/SUB75P03-08Vishay SiliconixP-Channel 30-V (D-S), 175_C MOSFETPRODUCT SUMMARYV(BR)DSS (V) rDS(on) (W) ID (A)30 0.008 75aSTO-220ABTO-263GDRAIN connected to TABG D STop ViewG D SDSUB75P03-08Top ViewP-Channel MOSFETSUP75P03-08ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED)Parameter Symbol Limit UnitGate-Source Voltage VGS "20 VTC = 2

 7.2. Size:143K  vishay
sub75p03-07 sup75p03-07.pdf

SUP75P05-08
SUP75P05-08

SUB75P03-07, SUP75P03-07Vishay SiliconixP-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Compliant to RoHS Directive 2002/95/ECVDS (V) RDS(on) ()ID (A)aAvailable0.007 at VGS = - 10 V 75RoHS*- 30COMPLIANT0.010 at VGS = - 4.5 V 75TO-263TO-220ABSG D STop ViewDRAIN connected to TABSUB75P03-07GG D STop ViewSUP75P03-07Ordering In

 7.3. Size:144K  vishay
sub75p03-07 sup75p03-07.pdf

SUP75P05-08
SUP75P05-08

SUB75P03-07, SUP75P03-07Vishay SiliconixP-Channel 30 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY Compliant to RoHS Directive 2002/95/ECVDS (V) RDS(on) ()ID (A)aAvailable0.007 at VGS = - 10 V 75RoHS*- 30COMPLIANT0.010 at VGS = - 4.5 V 75TO-263TO-220ABSG D STop ViewDRAIN connected to TABSUB75P03-07GG D STop ViewSUP75P03-07Ordering In

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