SUP85N02-03 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SUP85N02-03
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 250 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 8 V
|Id|ⓘ - Corriente continua
de drenaje: 85 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 200 nS
Cossⓘ - Capacitancia de salida: 2350 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.003 Ohm
Encapsulados: TO-220AB
Búsqueda de reemplazo de SUP85N02-03 MOSFET
- Selecciónⓘ de transistores por parámetros
SUP85N02-03 datasheet
..1. Size:92K vishay
sup85n02-03 sub85n02-03.pdf 
SUP/SUB85N02-03 Vishay Siliconix N-Channel 20-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A)a 0.003 @ VGS = 4.5 V 85 20 0.0034 @ VGS = 2.5 V 85 0.0038 @ VGS = 1.8 V 85 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S Ordering Information Top View S SUB85N02-03 E3 (Lead Free) Ordering Information N-Channel MOSFET SUP85N02-03 E3 (Le
..2. Size:70K vishay
sup85n02-03.pdf 
SUP/SUB85N02-03 Vishay Siliconix N-Channel 20-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A)a 0.003 @ VGS = 4.5 V 85 20 0.0034 @ VGS = 2.5 V 85 0.0038 @ VGS = 1.8 V 85 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S Ordering Information Top View S SUB85N02-03 E3 (Lead Free) Ordering Information N-Channel MOSFET SUP85N02-03 E3 (Le
4.1. Size:85K vishay
sup85n02-06 sub85n02-06.pdf 
SUP/SUB85N02-06 New Product Vishay Siliconix N-Channel 20-V (D-S), 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A)a 0.006 @ VGS = 4.5 V 85 20 20 0.009 @ VGS = 2.5 V 85 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB85N02-06 Top View N-Channel MOSFET SUP85N02-06 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol
7.1. Size:63K 1
sup85n03-07p sub85n03-07p.pdf 
SUP/SUB85N03-07P New Product Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A)a 0.007 @ VGS = 10 V 85 a 30 30 0.01 @ VGS = 4.5 V 75 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB85N03-07P Top View N-Channel MOSFET SUP85N03-07P ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symb
7.2. Size:67K vishay
sup85n04-04 sub85n04-04.pdf 
SUP/SUB85N04-04 Vishay Siliconix N-Channel 40-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 40 0.004 @ VGS = 10 V 85 a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S Top View Ordering Information Ordering Information N-Channel MOSFET SUP85N04-04 SUB85N04-04 SUP85N04-04 E3 (Lead (Pb)-Free) SUB85N04-04 E3 (Lead (Pb)-Free) ABSOLUTE
7.3. Size:95K vishay
sup85n03-3m6p.pdf 
SUP85N03-3m6P Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) Definition 0.0036 at VGS = 10 V 85d TrenchFET Power MOSFET 30 67 0.0044 at VGS = 4.5 V 85d 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Supply - Second
7.4. Size:88K vishay
sup85n04-03 sub85n04-03.pdf 
SUP/SUB85N04-03 New Product Vishay Siliconix N-Channel 40-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.0035 @ VGS = 10 V a 40 85 a 40 85 0.0053 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB85N04-03 Top View N-Channel MOSFET SUP85N04-03 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Sy
7.5. Size:70K vishay
sub85n03-04p sup85n03-04p sup85n03-04p.pdf 
SUP/SUB85N03-04P Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET FEATURES PRODUCT SUMMARY D TrenchFETr Power MOSFET V(BR)DSS (V) rDS(on) (W) ID (A)a D 175_C Maximum Junction Temperature 0.0043 @ VGS = 10 V 85a D TO-263 (D2PAK) 100% Rg Tested 30 30 0.007 @ VGS = 4.5 V 85a D TO-220AB TO-263 (D2PAK) G DRAIN connected to TAB G D S Top View G D S S SUB85N03-04P Top View N
7.6. Size:74K vishay
sup85n06-05 sub85n06-05.pdf 
SUP/SUB85N06-05 New Product Vishay Siliconix N-Channel 60-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.0052 @ VGS = 10 V 60 "85 a " 0.0072 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB85N06-05 Top View N-Channel MOSFET SUP85N06-05 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol L
7.7. Size:88K vishay
sub85n08-08 sup85n08-08.pdf 
SUP/SUB85N08-08 New Product Vishay Siliconix N-Channel 75-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 75 0.008 @ VGS = 10 V 85 a D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB85N08-08 Top View N-Channel MOSFET SUP85N08-08 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol Limit Unit Drain-Source Volt
7.8. Size:67K vishay
sup85n04-03.pdf 
SUP/SUB85N04-03 New Product Vishay Siliconix N-Channel 40-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A) 0.0035 @ VGS = 10 V a 40 85 a 40 85 0.0053 @ VGS = 4.5 V D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB85N04-03 Top View N-Channel MOSFET SUP85N04-03 ABSOLUTE MAXIMUM RATINGS (TC = 25_C UNLESS OTHERWISE NOTED) Parameter Sy
7.9. Size:90K vishay
sup85n03 sub85n03.pdf 
SUP/SUB85N03-07P New Product Vishay Siliconix N-Channel 30-V (D-S) 175_C MOSFET PRODUCT SUMMARY V(BR)DSS (V) rDS(on) (W) ID (A)a 0.007 @ VGS = 10 V 85 a 30 30 0.01 @ VGS = 4.5 V 75 D TO-220AB TO-263 G DRAIN connected to TAB G D S Top View G D S S SUB85N03-07P Top View N-Channel MOSFET SUP85N03-07P ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symb
7.10. Size:873K cn vbsemi
sup85n03-3m6p.pdf 
SUP85N03-3M6P www.VBsemi.tw N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.0035 at VGS = 10 V 98 30 82 nC 0.0045 at VGS = 4.5 V 98 APPLICATIONS OR-ing TO-220AB D Server DC/DC G S G D S N-Channel MOSFET Top View
Otros transistores... SUP60N06-12P
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History: FCPF11N60