SUP90N03-03 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SUP90N03-03
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 250 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 90 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 11 nS
   Cossⓘ - Capacitancia de salida: 1725 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0029 Ohm
   Paquete / Cubierta: TO-220AB

Búsqueda de reemplazo de MOSFET SUP90N03-03

SUP90N03-03 Datasheet (PDF)

..1. Size:184K vishay
sup90n03-03.pdf

SUP90N03-03Vishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0029 at VGS = 10 V 9030 82 nC0.0033 at VGS = 4.5 V 90APPLICATIONSTO-220AB OR-ingD Server DC/DCGDRAIN connected to TABSG

6.1. Size:83K vishay
sup90n03.pdf

New ProductSUP90N03-03Vishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested0.0029 at VGS = 10 V 90 RoHS 30 82 nCCOMPLIANT 0.0033 at VGS = 4.5 V 90APPLICATIONS OR-ing ServerTO-220AB DC/DCDGDRAIN connected to TABG D S STop View

7.1. Size:76K vishay
sum90n06-5m0p sup90n06-5m0p.pdf

SUP90N06-5m0PVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) Qg (Typ) 175 C Junction Temperature60 0.005 at VGS = 10 V RoHS90d 105 100 % Rg and UIS Tested COMPLIANTAPPLICATIONS Power Supply- Secondary Synchronous Rectification IndustrialTO-220AB OR-ingDGG

7.2. Size:178K vishay
sup90n04-3m3p.pdf

SUP90N04-3m3PVishay SiliconixN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.0033 at VGS = 10 V TrenchFET Power MOSFET9040 87 100 % Rg and UIS Tested0.0041 at VGS = 4.5 V90 Compliant to RoHS Directive 2002/95/ECTO-220ABAPPLICATIONS Power Supply

7.3. Size:172K vishay
sup90n08-6m8p.pdf

SUP90N08-6m8PVishay SiliconixN-Channel 75-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () ID (A) Qg (Typ.) 175 C Junction Temperature75 0.0068 at VGS = 10 V RoHS90d 75 100 % Rg and UIS TestedCOMPLIANT Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Supply- Secondary Synchronous RectificationTO-220

7.4. Size:156K vishay
sup90n08-4m8p.pdf

SUP90N08-4m8PVishay SiliconixN-Channel 75 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () ID (A) Qg (Typ) 175 C Junction TemperatureRoHSCOMPLIANT 0.0048 at VGS = 10 V 100 % UIS Tested90d75 1050.006 at VGS = 8 V Compliant to RoHS Directive 2002/95/EC90dAPPLICATIONS Power Supply- Half-BridgeTO-220AB- S

7.5. Size:180K vishay
sup90n08-8m2p.pdf

SUP90N08-8m2PVishay SiliconixN-Channel 75 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) () ID (A) Qg (Typ) 175 C Junction Temperature75 0.0082 at VGS = 10 V 100 % Rg and UIS Tested90d 58 Material categorization:For definitions of compliance please seewww.vishay.com/doc?99912TO-220AB APPLICATIONS Power S

7.6. Size:171K vishay
sup90n08.pdf

SUP90N08-8m2PVishay SiliconixN-Channel 75-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) () ID (A) Qg (Typ) 175 C Junction Temperature75 0.0082 at VGS = 10 V RoHS90d 58 100 % Rg and UIS Tested COMPLIANTAPPLICATIONS Power Supply- Secondary Synchronous Rectification IndustrialTO-220AB DGG D S STop

7.7. Size:62K vishay
sup90n06-05l.pdf

SUP90N06-05LNew ProductVishay SiliconixN-Channel 60-V (D-S) 175_C MOSFETPRODUCT SUMMARYFEATURESV(BR)DSS (V) rDS(on) (W) ID (A) D TrenchFETr Power MOSFETD 175_C Maximum Junction Temperature0.0049 @ VGS = 10 Va60 90 a60 900.0055 @ VGS = 4.5 VAPPLICATIONSD Automotive Such As- High-Side Switch- Motor Drives- 12-V BatteryD Synchronous RectificationTO-220ABDG

7.8. Size:152K vishay
sup90n06-6m0p.pdf

SUP90N06-6m0PVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () ID (A) Qg (Typ.) 175 C Junction Temperature60 0.006 at VGS = 10 V RoHS90d 78.5 100 % Rg and UIS TestedCOMPLIANT Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Supply- Secondary Synchronous RectificationTO-22

7.9. Size:176K vishay
sup90n08-7m7p.pdf

SUP90N08-7m7PVishay SiliconixN-Channel 75-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSVDS (V) RDS(on) () ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.0077 at VGS = 10 V75 RoHS90d 69COMPLIANTAPPLICATIONS Synchronous RectificationTO-220ABD DRAIN connected to TABG G D STop ViewS Ordering Information: SUP90N08-7m7P-E3 (Lead (P

7.10. Size:150K vishay
sup90n06.pdf

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