SUP90N10-8M8P MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SUP90N10-8M8P
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 300 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 90 A
Tjⓘ - Temperatura máxima de unión: 175 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 17 nS
Cossⓘ - Capacitancia de salida: 535 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0088 Ohm
Encapsulados: TO-220AB
Búsqueda de reemplazo de SUP90N10-8M8P MOSFET
- Selecciónⓘ de transistores por parámetros
SUP90N10-8M8P datasheet
..1. Size:166K vishay
sup90n10-8m8p.pdf 
SUP90N10-8m8P Vishay Siliconix N-Channel 100 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) 175 C Junction Temperature RoHS 0.0088 at VGS = 10 V 100 COMPLIANT 90d 97 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/EC TO-220AB APPLICATIONS Power Supply - Secondary Synchronous Recti
..2. Size:211K inchange semiconductor
sup90n10-8m8p.pdf
INCHANGE Semiconductor Isc N-Channel MOSFET Transistor SUP90N10-8M8P FEATURES TrenchFET Power MOSFET 175 C Junction Temperature 100 % Rg and UIS Tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Power Supply - Secondary Synchronous Rectification Industrial Primary Switch ABSOLUTE MAXIMUM RATINGS(T =25 ) a
7.1. Size:173K vishay
sup90n15-18p.pdf
SUP90N15-18P Vishay Siliconix N-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Qg (Typ) 175 C Junction Temperature 0.018 at VGS = 10 V RoHS 150 90d 64 COMPLIANT 100 % Rg and UIS Tested APPLICATIONS Primary Side Switch Industrial TO-220AB D G G D S S Top View Ordering Informatio
7.2. Size:172K vishay
sup90n15.pdf
SUP90N15-18P Vishay Siliconix N-Channel 150-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Qg (Typ) 175 C Junction Temperature 0.018 at VGS = 10 V RoHS 150 90d 64 COMPLIANT 100 % Rg and UIS Tested APPLICATIONS Primary Side Switch Industrial TO-220AB D G G D S S Top View Ordering Informatio
8.1. Size:76K vishay
sum90n06-5m0p sup90n06-5m0p.pdf
SUP90N06-5m0P Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( )ID (A) Qg (Typ) 175 C Junction Temperature 60 0.005 at VGS = 10 V RoHS 90d 105 100 % Rg and UIS Tested COMPLIANT APPLICATIONS Power Supply - Secondary Synchronous Rectification Industrial TO-220AB OR-ing D G G
8.2. Size:178K vishay
sup90n04-3m3p.pdf
SUP90N04-3m3P Vishay Siliconix N-Channel 40 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)d Qg (Typ.) Definition 0.0033 at VGS = 10 V TrenchFET Power MOSFET 90 40 87 100 % Rg and UIS Tested 0.0041 at VGS = 4.5 V 90 Compliant to RoHS Directive 2002/95/EC TO-220AB APPLICATIONS Power Supply
8.3. Size:83K vishay
sup90n03.pdf
New Product SUP90N03-03 Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) rDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested 0.0029 at VGS = 10 V 90 RoHS 30 82 nC COMPLIANT 0.0033 at VGS = 4.5 V 90 APPLICATIONS OR-ing Server TO-220AB DC/DC D G DRAIN connected to TAB G D S S Top View
8.4. Size:172K vishay
sup90n08-6m8p.pdf
SUP90N08-6m8P Vishay Siliconix N-Channel 75-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) 175 C Junction Temperature 75 0.0068 at VGS = 10 V RoHS 90d 75 100 % Rg and UIS Tested COMPLIANT Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Supply - Secondary Synchronous Rectification TO-220
8.5. Size:184K vishay
sup90n03-03.pdf
SUP90N03-03 Vishay Siliconix N-Channel 30-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU 0.0029 at VGS = 10 V 90 30 82 nC 0.0033 at VGS = 4.5 V 90 APPLICATIONS TO-220AB OR-ing D Server DC/DC G DRAIN connected to TAB S G
8.6. Size:156K vishay
sup90n08-4m8p.pdf
SUP90N08-4m8P Vishay Siliconix N-Channel 75 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ) 175 C Junction Temperature RoHS COMPLIANT 0.0048 at VGS = 10 V 100 % UIS Tested 90d 75 105 0.006 at VGS = 8 V Compliant to RoHS Directive 2002/95/EC 90d APPLICATIONS Power Supply - Half-Bridge TO-220AB - S
8.7. Size:180K vishay
sup90n08-8m2p.pdf
SUP90N08-8m2P Vishay Siliconix N-Channel 75 V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) RDS(on) ( ) ID (A) Qg (Typ) 175 C Junction Temperature 75 0.0082 at VGS = 10 V 100 % Rg and UIS Tested 90d 58 Material categorization For definitions of compliance please see www.vishay.com/doc?99912 TO-220AB APPLICATIONS Power S
8.8. Size:171K vishay
sup90n08.pdf
SUP90N08-8m2P Vishay Siliconix N-Channel 75-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET V(BR)DSS (V) rDS(on) ( ) ID (A) Qg (Typ) 175 C Junction Temperature 75 0.0082 at VGS = 10 V RoHS 90d 58 100 % Rg and UIS Tested COMPLIANT APPLICATIONS Power Supply - Secondary Synchronous Rectification Industrial TO-220AB D G G D S S Top
8.9. Size:62K vishay
sup90n06-05l.pdf
SUP90N06-05L New Product Vishay Siliconix N-Channel 60-V (D-S) 175_C MOSFET PRODUCT SUMMARY FEATURES V(BR)DSS (V) rDS(on) (W) ID (A) D TrenchFETr Power MOSFET D 175_C Maximum Junction Temperature 0.0049 @ VGS = 10 V a 60 90 a 60 90 0.0055 @ VGS = 4.5 V APPLICATIONS D Automotive Such As - High-Side Switch - Motor Drives - 12-V Battery D Synchronous Rectification TO-220AB D G
8.10. Size:152K vishay
sup90n06-6m0p.pdf
SUP90N06-6m0P Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) 175 C Junction Temperature 60 0.006 at VGS = 10 V RoHS 90d 78.5 100 % Rg and UIS Tested COMPLIANT Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Supply - Secondary Synchronous Rectification TO-22
8.11. Size:176K vishay
sup90n08-7m7p.pdf
SUP90N08-7m7P Vishay Siliconix N-Channel 75-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFETS VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) 100 % Rg and UIS Tested 0.0077 at VGS = 10 V 75 RoHS 90d 69 COMPLIANT APPLICATIONS Synchronous Rectification TO-220AB D DRAIN connected to TAB G G D S Top View S Ordering Information SUP90N08-7m7P-E3 (Lead (P
8.12. Size:150K vishay
sup90n06.pdf
SUP90N06-6m0P Vishay Siliconix N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY TrenchFET Power MOSFET VDS (V) RDS(on) ( ) ID (A) Qg (Typ.) 175 C Junction Temperature 60 0.006 at VGS = 10 V RoHS 90d 78.5 100 % Rg and UIS Tested COMPLIANT Compliant to RoHS Directive 2002/95/EC APPLICATIONS Power Supply - Secondary Synchronous Rectification TO-22
Otros transistores... SUP90N03-03, SUP90N04-3M3P, SUP90N06-5M0P, SUP90N06-6M0P, SUP90N08-4M8P, SUP90N08-6M8P, SUP90N08-7M7P, SUP90N08-8M2P, IRFB4227, SUP90N15-18P, SUP90P06-09L, SUU09N10-76P, SUU10P10-195, SUV85N10-10, SM1105NSK, SM1105NSUB, SM1108NSF
