SUP90P06-09L Todos los transistores

 

SUP90P06-09L MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SUP90P06-09L
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 250 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 60 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 90 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 3 V
   Qgⓘ - Carga de la puerta: 160 nC
   trⓘ - Tiempo de subida: 190 nS
   Cossⓘ - Capacitancia de salida: 975 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0093 Ohm
   Paquete / Cubierta: TO-220AB

 Búsqueda de reemplazo de MOSFET SUP90P06-09L

 

SUP90P06-09L Datasheet (PDF)

 ..1. Size:149K  vishay
sup90p06-09l.pdf

SUP90P06-09L
SUP90P06-09L

SUP90P06-09LVishay SiliconixP-Channel 60 V (D-S) 175 C MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)c Compliant to RoHS Directive 2002/95/ECRoHS0.0093 at VGS = - 10 V - 90COMPLIANT - 600.0118 at VGS = - 4.5 V - 90APPLICATIONS DC/DC Primary SwitchTO-220AB SGDrain connected to TabG D S Top View DO

 9.1. Size:76K  vishay
sum90n06-5m0p sup90n06-5m0p.pdf

SUP90P06-09L
SUP90P06-09L

SUP90N06-5m0PVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) Qg (Typ) 175 C Junction Temperature60 0.005 at VGS = 10 V RoHS90d 105 100 % Rg and UIS Tested COMPLIANTAPPLICATIONS Power Supply- Secondary Synchronous Rectification IndustrialTO-220AB OR-ingDGG

 9.2. Size:178K  vishay
sup90n04-3m3p.pdf

SUP90P06-09L
SUP90P06-09L

SUP90N04-3m3PVishay SiliconixN-Channel 40 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ()ID (A)d Qg (Typ.)Definition0.0033 at VGS = 10 V TrenchFET Power MOSFET9040 87 100 % Rg and UIS Tested0.0041 at VGS = 4.5 V90 Compliant to RoHS Directive 2002/95/ECTO-220ABAPPLICATIONS Power Supply

 9.3. Size:83K  vishay
sup90n03.pdf

SUP90P06-09L
SUP90P06-09L

New ProductSUP90N03-03Vishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested0.0029 at VGS = 10 V 90 RoHS 30 82 nCCOMPLIANT 0.0033 at VGS = 4.5 V 90APPLICATIONS OR-ing ServerTO-220AB DC/DCDGDRAIN connected to TABG D S STop View

 9.4. Size:172K  vishay
sup90n08-6m8p.pdf

SUP90P06-09L
SUP90P06-09L

SUP90N08-6m8PVishay SiliconixN-Channel 75-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () ID (A) Qg (Typ.) 175 C Junction Temperature75 0.0068 at VGS = 10 V RoHS90d 75 100 % Rg and UIS TestedCOMPLIANT Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Supply- Secondary Synchronous RectificationTO-220

 9.5. Size:184K  vishay
sup90n03-03.pdf

SUP90P06-09L
SUP90P06-09L

SUP90N03-03Vishay SiliconixN-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) ()ID (A)a, e Qg (Typ) 100 % Rg and UIS Tested Compliant to RoHS Directive 2011/65/EU0.0029 at VGS = 10 V 9030 82 nC0.0033 at VGS = 4.5 V 90APPLICATIONSTO-220AB OR-ingD Server DC/DCGDRAIN connected to TABSG

 9.6. Size:156K  vishay
sup90n08-4m8p.pdf

SUP90P06-09L
SUP90P06-09L

SUP90N08-4m8PVishay SiliconixN-Channel 75 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () ID (A) Qg (Typ) 175 C Junction TemperatureRoHSCOMPLIANT 0.0048 at VGS = 10 V 100 % UIS Tested90d75 1050.006 at VGS = 8 V Compliant to RoHS Directive 2002/95/EC90dAPPLICATIONS Power Supply- Half-BridgeTO-220AB- S

 9.7. Size:150K  vishay
sup90142e.pdf

SUP90P06-09L
SUP90P06-09L

SUP90142Ewww.vishay.comVishay SiliconixN-Channel 200 V (D-S) 175 C MOSFETFEATURESTO-220AB ThunderFET power MOSFET Tuned for the lowest RDS - Qoss FOM Maximum 175 C junction temperature 100 % Rg and UIS tested Material categorization:for definitions of compliance please seewww.vishay.com/doc?99912SSDGTop View APPLICATIONSD Power suppl

 9.8. Size:180K  vishay
sup90n08-8m2p.pdf

SUP90P06-09L
SUP90P06-09L

SUP90N08-8m2PVishay SiliconixN-Channel 75 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) RDS(on) () ID (A) Qg (Typ) 175 C Junction Temperature75 0.0082 at VGS = 10 V 100 % Rg and UIS Tested90d 58 Material categorization:For definitions of compliance please seewww.vishay.com/doc?99912TO-220AB APPLICATIONS Power S

 9.9. Size:173K  vishay
sup90n15-18p.pdf

SUP90P06-09L
SUP90P06-09L

SUP90N15-18PVishay SiliconixN-Channel 150-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) Qg (Typ) 175 C Junction Temperature0.018 at VGS = 10 V RoHS15090d 64COMPLIANT 100 % Rg and UIS TestedAPPLICATIONS Primary Side Switch IndustrialTO-220AB D G G D S S Top View Ordering Informatio

 9.10. Size:166K  vishay
sup90n10-8m8p.pdf

SUP90P06-09L
SUP90P06-09L

SUP90N10-8m8PVishay SiliconixN-Channel 100 V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () ID (A) Qg (Typ.) 175 C Junction TemperatureRoHS0.0088 at VGS = 10 V100 COMPLIANT 90d 97 100 % Rg and UIS Tested Compliant to RoHS Directive 2002/95/ECTO-220AB APPLICATIONS Power Supply- Secondary Synchronous Recti

 9.11. Size:171K  vishay
sup90n08.pdf

SUP90P06-09L
SUP90P06-09L

SUP90N08-8m2PVishay SiliconixN-Channel 75-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) () ID (A) Qg (Typ) 175 C Junction Temperature75 0.0082 at VGS = 10 V RoHS90d 58 100 % Rg and UIS Tested COMPLIANTAPPLICATIONS Power Supply- Secondary Synchronous Rectification IndustrialTO-220AB DGG D S STop

 9.12. Size:62K  vishay
sup90n06-05l.pdf

SUP90P06-09L
SUP90P06-09L

SUP90N06-05LNew ProductVishay SiliconixN-Channel 60-V (D-S) 175_C MOSFETPRODUCT SUMMARYFEATURESV(BR)DSS (V) rDS(on) (W) ID (A) D TrenchFETr Power MOSFETD 175_C Maximum Junction Temperature0.0049 @ VGS = 10 Va60 90 a60 900.0055 @ VGS = 4.5 VAPPLICATIONSD Automotive Such As- High-Side Switch- Motor Drives- 12-V BatteryD Synchronous RectificationTO-220ABDG

 9.13. Size:152K  vishay
sup90n06-6m0p.pdf

SUP90P06-09L
SUP90P06-09L

SUP90N06-6m0PVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () ID (A) Qg (Typ.) 175 C Junction Temperature60 0.006 at VGS = 10 V RoHS90d 78.5 100 % Rg and UIS TestedCOMPLIANT Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Supply- Secondary Synchronous RectificationTO-22

 9.14. Size:176K  vishay
sup90n08-7m7p.pdf

SUP90P06-09L
SUP90P06-09L

SUP90N08-7m7PVishay SiliconixN-Channel 75-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETSVDS (V) RDS(on) () ID (A) Qg (Typ.) 100 % Rg and UIS Tested0.0077 at VGS = 10 V75 RoHS90d 69COMPLIANTAPPLICATIONS Synchronous RectificationTO-220ABD DRAIN connected to TABG G D STop ViewS Ordering Information: SUP90N08-7m7P-E3 (Lead (P

 9.15. Size:150K  vishay
sup90n06.pdf

SUP90P06-09L
SUP90P06-09L

SUP90N06-6m0PVishay SiliconixN-Channel 60-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) RDS(on) () ID (A) Qg (Typ.) 175 C Junction Temperature60 0.006 at VGS = 10 V RoHS90d 78.5 100 % Rg and UIS TestedCOMPLIANT Compliant to RoHS Directive 2002/95/ECAPPLICATIONS Power Supply- Secondary Synchronous RectificationTO-22

 9.16. Size:172K  vishay
sup90n15.pdf

SUP90P06-09L
SUP90P06-09L

SUP90N15-18PVishay SiliconixN-Channel 150-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETV(BR)DSS (V) rDS(on) ()ID (A) Qg (Typ) 175 C Junction Temperature0.018 at VGS = 10 V RoHS15090d 64COMPLIANT 100 % Rg and UIS TestedAPPLICATIONS Primary Side Switch IndustrialTO-220AB D G G D S S Top View Ordering Informatio

 9.17. Size:211K  inchange semiconductor
sup90n10-8m8p.pdf

SUP90P06-09L
SUP90P06-09L

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor SUP90N10-8M8PFEATURESTrenchFET Power MOSFET175 C Junction Temperature100 % Rg and UIS TestedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRITIONPower Supply- Secondary Synchronous RectificationIndustrialPrimary SwitchABSOLUTE MAXIMUM RATINGS(T =25)a

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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