SM1108NSF MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SM1108NSF
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 300 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 120 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 4 V
   Qgⓘ - Carga de la puerta: 110 nC
   trⓘ - Tiempo de subida: 20 nS
   Cossⓘ - Capacitancia de salida: 900 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0074 Ohm
   Paquete / Cubierta: TO-220

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SM1108NSF Datasheet (PDF)

..1. Size:155K sino
sm1108nsf.pdf

SM1108NSF/SM1108NSFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/120A,RDS(ON)=7.4m (max.) @ VGS=10V Reliable and Rugged S SD DG G Lead Free and Green Devices AvailableTop View of TO-220 Top View of TO-220-FP(RoHS Compliant)DApplicationsG Synchronous Rectification. Power Management in Inverter Systems.SN-Channel MOSFETOrdering and

9.1. Size:101K taiwansemi
tsm110n06cz.pdf

9.2. Size:237K sino
sm1102psf.pdf

SM1102PSFP-Channel Enhancement Mode MOSFETFeatures Pin Description -100V/-27A,RDS(ON)= 42m (Max.) @ VGS=-10VRDS(ON)= 52m (Max.) @ VGS=-4.5VSD Reliable and RuggedG Lead Free and Green Devices Available Top View of TO-220(RoHS Compliant)SApplicationsG Power Management in DC/DC Converters andBattery Powered SystemDP-Channel MOSFETOrdering and Marking Inf

9.3. Size:265K sino
sm1105nsv.pdf

SM1105NSVN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/3.5A, RDS(ON)= 105m (max.) @ VGS= 10VG RDS(ON)= 175m (max.) @ VGS= 4.5VDS ESD proteced Reliable and RuggedTop View SOT-223 Lead Free and Green Devices Available (RoHS Compliant)DApplications Power Management in TV Inverter.GSN-Channel MOSFETOrdering and Marking InformationPackage Co

9.4. Size:305K sino
sm1105nsub.pdf

SM1105NSUBN-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/16A,RDS(ON)= 100m (max.) @ VGS=10VSRDS(ON)= 170m (max.) @ VGS=4.5VDG ESD ProtectedTop View of TO-251 Reliable and RuggedD Lead Free and Green Devices Available(RoHS Compliant)GApplications Power Management in TV Inverter.SN-Channel MOSFETOrdering and Marking InformationPackage

9.5. Size:262K sino
sm1105nsk.pdf

SM1105NSK N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDDD 100V/3.5A, RDS(ON)= 105m (max.) @ VGS= 10V RDS(ON)= 175m (max.) @ VGS= 4.5V SSS ESD protecedG Reliable and RuggedTop View of SOP-8 Lead Free and Green Devices Available( 5,6,7,8 ) (RoHS Compliant)D D D DApplications Power Management in TV Inverter. (4)GS S S(1, 2, 3)N-Chan

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