SM1A13NSK Todos los transistores

 

SM1A13NSK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SM1A13NSK
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 7 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 120 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.051 Ohm
   Paquete / Cubierta: SOP-8
     - Selección de transistores por parámetros

 

SM1A13NSK Datasheet (PDF)

 ..1. Size:260K  sino
sm1a13nsk.pdf pdf_icon

SM1A13NSK

SM1A13NSK N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDDD 100V/7A,D RDS(ON)= 51m (max.) @ VGS= 10V RDS(ON)= 57m (max.) @ VGS= 4.5VSS ESD protecedSG Reliable and RuggedTop View of SOP-8 Lead Free and Green Devices Available( 5,6,7,8 ) (RoHS Compliant)D D DDApplications(4) Power Management in DC/DC Converter.GS S S(1, 2, 3)N-C

 9.1. Size:150K  sino
sm1a11nsub.pdf pdf_icon

SM1A13NSK

SM1A11NSUB N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/24A, RDS(ON)= 45m (Max.) @ VGS=10VS Reliable and RuggedDG Lead Free and Green Devices AvailableTop View of TO-251(RoHS Compliant) 100% UIS + Rg TestedDApplicationsG High Speed Switching. High Voltage Synchronous Rectification forS Industrial Application.N-Channel MOS

 9.2. Size:261K  sino
sm1a11nsu.pdf pdf_icon

SM1A13NSK

SM1A11NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 100V/24A,Drain 4 RDS(ON)= 45m (Max.) @ VGS=10V3Source2 Reliable and Rugged1Gate Lead Free and Green Devices Available(RoHS Compliant)Top View of TO-252-3DApplicationsG High Speed Switching. High Voltage Synchronous Rectification forS Industrial Application.N-Channel MOSFETOrderi

 9.3. Size:276K  sino
sm1a16psv.pdf pdf_icon

SM1A13NSK

SM1A16PSV P-Channel Enhancement Mode MOSFETFeatures Pin Configuration -100V/-2.5A,RDS(ON)=205m (max.) @ VGS=-10VGRDS(ON)=260m (max.) @ VGS=-4.5VDS Reliable and Rugged Lead Free and Green Devices AvailableTop View of SOT-223(RoHS Compliant)DApplicationsG Power Management in Desktop Computer orDC/DC Converters.SP-Channel MOSFETOrdering and Marking Informa

Otros transistores... FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: WMB090DN04LG2 | IXFK48N50Q | 2N7064 | FQD5N15TF | SVF4N60CAF | UT9435HL-AA3-R | FDD6688S

 

 
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