MMBF2202PT1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMBF2202PT1
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 0.15 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
|Id|ⓘ - Corriente continua de drenaje: 0.3 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 1 nS
Cossⓘ - Capacitancia de salida: 45 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 2.2 Ohm
Paquete / Cubierta: SOT-323
Búsqueda de reemplazo de MOSFET MMBF2202PT1
MMBF2202PT1 Datasheet (PDF)
mmbf2202pt1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF2202PT1/DMMBF2202PT1Motorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsTMOS Single P-ChannelPCHANNELENHANCEMENTMODEField Effect TransistorsTMOS MOSFETPart of the GreenLine Portfolio of devices with energycon- rDS(on) = 2.2 OHMserving traits.These miniature surface mount MOSFETs uti
mmbf2202pt1.pdf
MMBF2202PT1Preferred DevicePower MOSFET300 mAmps, 20 VoltsP-Channel SC-70/SOT-323These miniature surface mount MOSFETs low RDS(on) assurehttp://onsemi.comminimal power loss and conserve energy, making these devices idealfor use in small power management circuitry. Typical applications are300 mAMPS, 20 VOLTSdc-dc converters, power management in portable andbattery-powered p
mmbf2202pt1rev2.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF2202PT1/DMMBF2202PT1Motorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsTMOS Single P-ChannelPCHANNELField Effect TransistorsENHANCEMENTMODETMOS MOSFETPart of the GreenLine Portfolio of devices with energycon-rDS(on) = 2.2 OHMserving traits.These miniature surface mount MOSFETs
mmbf2202.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF2202PT1/DMMBF2202PT1Motorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsTMOS Single P-ChannelPCHANNELENHANCEMENTMODEField Effect TransistorsTMOS MOSFETPart of the GreenLine Portfolio of devices with energycon- rDS(on) = 2.2 OHMserving traits.These miniature surface mount MOSFETs uti
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mmbf2201nt1.pdf
MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBF2201NT1/DMMBF2201NT1Motorola Preferred DeviceLow rDS(on) Small-Signal MOSFETsTMOS Single N-ChannelNCHANNELENHANCEMENTMODEField Effect TransistorsTMOS MOSFETrDS(on) = 1.0 OHMPart of the GreenLine Portfolio of devices with energycon-serving traits.These miniature surface mount MOSFE
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mmbf2201n nvf2201n.pdf
MMBF2201N, NVF2201NPower MOSFET300 mAmps, 20 VoltsN-Channel SC-70/SOT-323These miniature surface mount MOSFETs low RDS(on) assurehttp://onsemi.comminimal power loss and conserve energy, making these devices idealfor use in small power management circuitry. Typical applications are300 mAMPS, 20 VOLTSdc-dc converters, power management in portable andbattery-powered products su
mmbf2201nt1-d.pdf
MMBF2201NT1Preferred DevicePower MOSFET300 mAmps, 20 VoltsN-Channel SC-70/SOT-323These miniature surface mount MOSFETs low RDS(on) assurehttp://onsemi.comminimal power loss and conserve energy, making these devices idealfor use in small power management circuitry. Typical applications are300 mAMPS, 20 VOLTSdc-dc converters, power management in portable andbattery-powered p
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