MMBFJ110 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

April 2011MMBFJ110N-Channel SwitchSuperSOT-3Features3 This device is designed for digital switching applications2 where very low on resistance is mandatory.Marking : 110 Sourced from process 58.11. Drain 2. Source 3. GateAbsolute Maximum Ratings* TA=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 25 VVGS Gate-Source Voltage -

August 2012J111 / J112 / J113 / MMBFJ111 / MMBFJ112 / MMBFJ112_SB51338 / MMBFJ113N-Channel SwitchFeatures This device is designed for low level analog switching, sample and hold circuits and chopper stabilized amplifiers. Sourced from Process 51. Source & Drain are interchangeable.MMBFJ111J111 MMBFJ112J112 MMBFJ112_SB51338J113 MMBFJ113GSSOT-23G TO-92 Mark

J111 MMBFJ111J112 MMBFJ112J113 MMBFJ113GSG TO-92S SOT-23 DDMark: 6P / 6R / 6SNOTE: Source & Drain are interchangeableN-Channel SwitchThis device is designed for low level analog switching, sampleand hold circuits and chopper stabilized amplifiers. Sourcedfrom Process 51.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVDG D

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBFJ175LT1/DJFET ChopperMMBFJ175LT1PChannel DepletionMotorola Preferred Device2 SOURCE3GATE31 DRAIN12MAXIMUM RATINGSRating Symbol Value UnitCASE 31808, STYLE 10SOT23 (TO236AB)DrainGate Voltage VDG 25 VReverse GateSource Voltage VGS(r) 25 VTHERMAL CHARACTERISTICSCharact

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBFJ175LT1/DJFET ChopperMMBFJ175LT1PChannel DepletionMotorola Preferred Device2 SOURCE3GATE31 DRAIN12MAXIMUM RATINGSRating Symbol Value UnitCASE 31808, STYLE 10SOT23 (TO236AB)DrainGate Voltage VDG 25 VReverse GateSource Voltage VGS(r) 25 VTHERMAL CHARACTERISTICSCharact

MOTOROLAOrder this documentSEMICONDUCTOR TECHNICAL DATAby MMBFJ177LT1/DJFET ChopperPChannel Depletion MMBFJ177LT12 SOURCE3GATE1 DRAIN31MAXIMUM RATINGS2Rating Symbol Value UnitDrainGate Voltage VDG 25 VdcCASE 31808, STYLE 10SOT23 (TO236AB)Reverse GateSource Voltage VGS(r) 25 VdcTHERMAL CHARACTERISTICSCharacteristic Symbol Max Unit

J108/J109/J110/MMBFJ108N-Channel Switch3 This device is designed for digital switching applications where very low on resistance is mandatory.2 Sourced from Process 58.TO-921 SuperSOT-31Marking: I81. Drain 2. Source 3. Gate 1. Drain 2. Source 3. GateAbsolute Maximum Ratings * TA=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 25

J174 MMBFJ175J175 MMBFJ176J176 MMBFJ177J177GSS TO-92DSOT-23GDMark: 6W / 6X / 6YNOTE: Source & Drain are interchangeableP-Channel SwitchThis device is designed for low level analog switching sample and holdcircuits and chopper stabilized amplifiers. Sourced from Process 88.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value Units

J108/J109/J110/MMBFJ108N-Channel Switch3 This device is designed for digital switching applications where very low on resistance is mandatory.2 Sourced from Process 58.TO-921 SuperSOT-31Marking: I81. Drain 2. Source 3. Gate 1. Drain 2. Source 3. GateAbsolute Maximum Ratings * TA=25C unless otherwise notedSymbol Parameter Value UnitsVDG Drain-Gate Voltage 25

MMBFJ177LT1GJFET ChopperP-Channel - DepletionFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS http://onsemi.comCompliant2 SOURCE3MAXIMUM RATINGSGATERating Symbol Value UnitDrain-Gate Voltage VDG 25 Vdc1 DRAINReverse Gate-Source Voltage VGS(r) -25 VdcStresses exceeding Maximum Ratings may damage the device. MaximumRatings are stress ratings

MMBFJ175LT1GJFET ChopperP-Channel - DepletionFeatures These Devices are Pb-Free, Halogen Free/BFR Free and are RoHShttp://onsemi.comCompliant2 SOURCEMAXIMUM RATINGS3Rating Symbol Value UnitGATEDrain-Gate Voltage VDG 25 VReverse Gate-Source Voltage VGS(r) -25 V1 DRAINTHERMAL CHARACTERISTICSCharacteristic Symbol Max UnitTotal Device Dissipation FR-5 Board, PD