MMD70R900PRH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMD70R900PRH
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 40 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 700 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 25 nS
Cossⓘ - Capacitancia de salida: 330 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.9 Ohm
Encapsulados: TO-252
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MMD70R900PRH datasheet
mmd70r900prh.pdf
MMD70R900P Datasheet MMD70R900P 700V 0.9 N-channel MOSFET Description MMD70R900P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo
mmd70r900prh.pdf
isc N-Channel MOSFET Transistor MMD70R900PRH FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V = 700V(Min) DSS Static Drain-Source On-Resistance R = 0.9 (Max) @V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
mmd70r900p.pdf
MMD70R900P Datasheet MMD70R900P 700V 0.9 N-channel MOSFET Description MMD70R900P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo
mmd70r600prh.pdf
MMD70R600P Datasheet MMD70R600P 700V 0.6 N-channel MOSFET Description MMD70R600P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as lo
Otros transistores... MMD50R380PRH, MMD60R360PRH, MMD60R580PRH, MMD60R750PRH, MMD60R900PRH, MMD70R1K4PRH, MMD70R600PRH, MMD70R750PRH, IRFZ24N, MMD80R900PRH, MMDF1N05ER2G, MMDF3N02HDR2, MMDF3N02HDR2G, MME60R290PRH, MME70R380PRH, MMF50R280PTH, MMF60R115PTH
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