MMIX1F180N25T MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MMIX1F180N25T

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 570 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 250 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 130 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 33 nS

Cossⓘ - Capacitancia de salida: 2050 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm

Encapsulados: ISOLATED TAB

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MMIX1F180N25T datasheet

 ..1. Size:183K  ixys
 mmix1f180n25t.pdf pdf_icon

MMIX1F180N25T

Advance Technical Information GigaMOSTM TrenchTM VDSS = 250V MMIX1F180N25T HiperFETTM ID25 = 130A Power MOSFET RDS(on) 13m trr 200ns (Electrically Isolated Tab) D N-Channel Enhancement Mode G Avalanche Rated Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings Isolated Tab VDSS TJ = 25 C to 150 C 250 V V

 7.1. Size:182K  ixys
 mmix1f132n50p3.pdf pdf_icon

MMIX1F180N25T

Advance Technical Information Polar3TM HiPerFETTM VDSS = 500V MMIX1F132N50P3 Power MOSFET ID25 = 63A RDS(on) 43m (Electrically Isolated Tab) trr 250ns D N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Rectifier S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 500 V Isolated Tab VDGR TJ =

 7.2. Size:183K  ixys
 mmix1f160n30t.pdf pdf_icon

MMIX1F180N25T

Advance Technical Information GigaMOSTM TrenchTM VDSS = 300V MMIX1F160N30T HiperFETTM ID25 = 102A Power MOSFET RDS(on) 20m trr 200ns (Electrically Isolated Tab) D N-Channel Enhancement Mode G Avalanche Rated Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings Isolated Tab VDSS TJ = 25 C to 150 C 300 V V

 8.1. Size:225K  ixys
 mmix1f420n10t.pdf pdf_icon

MMIX1F180N25T

Advance Technical Information GigaMOSTM TrenchTM VDSS = 100V MMIX1F420N10T HiperFETTM ID25 = 334A Power MOSFET RDS(on) 2.6m Trr 140ns (Electrically Isolated Tab) D N-Channel Enhancement Mode Avalanche Rated G Fast Intrinsic Diode S Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 175 C 100 V Isolated Tab

MOSTRAR MÁS

Otros transistores... MMIS60R580PTH, MMIS60R750PTH, MMIS60R900PTH, MMIS70H900QTH, MMIS70R1K4PTH, MMIS70R900PTH, MMIX1F132N50P3, MMIX1F160N30T, IRF640N, MMIX1F210N30P3, MMIX1F230N20T, MMIX1F360N15T2, MMIX1F40N110P, MMIX1F420N10T, MMIX1F44N100Q3, MML60R190PTH, MML60R290PTH