MMIX1F180N25T Todos los transistores

 

MMIX1F180N25T MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMIX1F180N25T
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 570 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 250 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 130 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 33 nS
   Cossⓘ - Capacitancia de salida: 2050 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.013 Ohm
   Paquete / Cubierta: ISOLATED TAB
     - Selección de transistores por parámetros

 

MMIX1F180N25T Datasheet (PDF)

 ..1. Size:183K  ixys
 mmix1f180n25t.pdf pdf_icon

MMIX1F180N25T

Advance Technical InformationGigaMOSTM TrenchTMVDSS = 250VMMIX1F180N25THiperFETTMID25 = 130A Power MOSFET RDS(on) 13m trr 200ns(Electrically Isolated Tab)DN-Channel Enhancement ModeGAvalanche RatedFast Intrinsic DiodeSSymbol Test Conditions Maximum Ratings Isolated TabVDSS TJ = 25C to 150C 250 VV

 7.1. Size:182K  ixys
 mmix1f132n50p3.pdf pdf_icon

MMIX1F180N25T

Advance Technical InformationPolar3TM HiPerFETTM VDSS = 500VMMIX1F132N50P3Power MOSFET ID25 = 63A RDS(on) 43m (Electrically Isolated Tab) trr 250nsDN-Channel Enhancement ModeAvalanche RatedGFast Intrinsic RectifierSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 150C 500 V Isolated TabVDGR TJ =

 7.2. Size:183K  ixys
 mmix1f160n30t.pdf pdf_icon

MMIX1F180N25T

Advance Technical InformationGigaMOSTM TrenchTMVDSS = 300VMMIX1F160N30THiperFETTMID25 = 102A Power MOSFET RDS(on) 20m trr 200ns(Electrically Isolated Tab)DN-Channel Enhancement ModeGAvalanche RatedFast Intrinsic DiodeSSymbol Test Conditions Maximum Ratings Isolated TabVDSS TJ = 25C to 150C 300 VV

 8.1. Size:225K  ixys
 mmix1f420n10t.pdf pdf_icon

MMIX1F180N25T

Advance Technical InformationGigaMOSTM TrenchTMVDSS = 100VMMIX1F420N10THiperFETTMID25 = 334A Power MOSFET RDS(on) 2.6m Trr 140ns(Electrically Isolated Tab)DN-Channel Enhancement ModeAvalanche RatedGFast Intrinsic DiodeSSymbol Test Conditions Maximum RatingsVDSS TJ = 25C to 175C 100 V Isolated Tab

MOSTRAR MÁS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TSA3878 | IRF7779L2TRPBF | SSM4502GM | FPF1C2P5BF07A | FQD20N06L | SGSP341 | AOK160A60FDL

 

 
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