MML60R290PTH MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: MML60R290PTH

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 104 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 600 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 13 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 45 nS

Cossⓘ - Capacitancia de salida: 750 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.29 Ohm

Encapsulados: TO-262

 Búsqueda de reemplazo de MML60R290PTH MOSFET

- Selecciónⓘ de transistores por parámetros

 

MML60R290PTH datasheet

 ..1. Size:1537K  magnachip
mml60r290pth.pdf pdf_icon

MML60R290PTH

MML60R290P Datasheet MML60R290P 600V 0.29 N-channel MOSFET Description MML60R290P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

 8.1. Size:1334K  magnachip
mml60r190pth.pdf pdf_icon

MML60R290PTH

MML60R190P Datasheet MML60R190P 600V 0.19 N-channel MOSFET Description MML60R190P is power MOSFET using magnachip s advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l

Otros transistores... MMIX1F180N25T, MMIX1F210N30P3, MMIX1F230N20T, MMIX1F360N15T2, MMIX1F40N110P, MMIX1F420N10T, MMIX1F44N100Q3, MML60R190PTH, 2N7000, MML65R190PTH, MMN2302, MMN2312, MMN25N03, MMN3205, MMN3220, MMN3400, MMN35N03