MMN4336 Todos los transistores

 

MMN4336 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: MMN4336
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.6 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 25 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 11.92 nS
   Cossⓘ - Capacitancia de salida: 683.12 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0036 Ohm
   Paquete / Cubierta: SOP-8
 

 Búsqueda de reemplazo de MMN4336 MOSFET

   - Selección ⓘ de transistores por parámetros

 

MMN4336 Datasheet (PDF)

 ..1. Size:201K  m-mos
 mmn4336.pdf pdf_icon

MMN4336

MMN4336Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@25A = 3.6mRDS(ON), Vgs@4.5V, Ids@22A = 4.8mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceFully Characterized Avalanche Voltage and CurrentSOP-08 Internal Schematic DiagramDrain Gate Source Top

 8.1. Size:218K  m-mos
 mmn4338.pdf pdf_icon

MMN4336

MMN4338Preliminary Package Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@4.9A = 42mRDS(ON), Vgs@4.5V, Ids@4.1A = 65mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOP-08 Internal Schematic DiagramDrain Gate Source Top View N-Channel MOSFETMaximum

 9.1. Size:185K  m-mos
 mmn4364dy.pdf pdf_icon

MMN4336

MMN4364DYPreliminary Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@20A = 5.5mRDS(ON), Vgs@4.5V, Ids@19A = 6.5mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceFully Characterized Avalanche Voltage and CurrentSO-8 Internal Schematic DiagramDrain Gate

 9.2. Size:292K  m-mos
 mmn4326.pdf pdf_icon

MMN4336

MMN4326Package Data SheetM-MOS Semiconductor Hong Kong Limited30V N-Channel Enhancement-Mode MOSFETVDS= 30VRDS(ON), Vgs@10V, Ids@8.5A = 41mRDS(ON), Vgs@4.5V, Ids@8.5A = 45mRDS(ON), Vgs@2.5V, Ids@5.0A = 59mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSOP-08 Internal Schematic DiagramDrain Gate Source Top View

MOSTRAR MÁS

Otros transistores... MMN25N03 , MMN3205 , MMN3220 , MMN3400 , MMN35N03 , MMN404 , MMN4307 , MMN4326 , IRF4905 , MMN4338 , MMN4364DY , MMN4410 , MMN4414 , MMN4418 , MMN4422 , MMN4430 , MMN4444 .

History: PMT21EN | GT52N10D5 | WM03N58M | BSC011N03LS | CHM4301ZGP | BLP03N08-BA | BRCS055N08SHBD

 

 
Back to Top

 


 
.