MMP4425 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMP4425
Tipo de FET: MOSFET
Polaridad de transistor: P
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 3.1 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 38 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 14 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 7.32 nS
Cossⓘ - Capacitancia de salida: 332.09 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.015 Ohm
Paquete / Cubierta: SO-8
Búsqueda de reemplazo de MMP4425 MOSFET
MMP4425 Datasheet (PDF)
mmp4425.pdf
MMP4425Data SheetM-MOS Semiconductor Hong Kong Limited38V P-Channel Enhancement-Mode MOSFETVDS= -38VRDS(ON), Vgs@-10V, Ids@-14A = 15mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSO-8 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)Parameter
mmp4425dy.pdf
MMP4425DYData SheetM-MOS Semiconductor Hong Kong Limited30 P-Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-11A = 14mRDS(ON), Vgs@-4.5V, Ids@-8.5A = 20mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceS0-8 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characteristics (TA
mmp4415a.pdf
MMP4415AData SheetM-MOS Semiconductor Hong Kong Limited30V P- Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-8A = 28mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceImproved Shoot-Through FOMSOP-08 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characteristics (TA = 25oC unl
mmp4411.pdf
MMP4411Data SheetM-MOS Semiconductor Hong Kong Limited30V P-Channel Enhancement-Mode MOSFETVDS= -30VRDS(ON), Vgs@-10V, Ids@-8A = 32mRDS(ON), Vgs@-4.5V, Ids@-5A = 55mFeaturesAdvanced trench process technologyHigh Density Cell Design For Ultra Low On-ResistanceSO-8 Internal Schematic DiagramTop View P-Channel MOSFETMaximum Ratings and Thermal Characteristics (TA = 25
Otros transistores... MMP4353 , MMP4357 , MMP4383 , MMP4399 , MMP4407 , MMP4411 , MMP4411DY , MMP4415A , STP65NF06 , MMP4425DY , MMP4435BDY , MMP60R190PTH , MMP60R195PCTH , MMP60R290PCTH , MMP60R290PTH , MMP60R360PTH , MMP60R580PTH .
History: SL60N06 | MMP4435BDY | MMN8205 | IRFH7184 | MMP60R290PCTH | OSG70R350DF | IRFH7110
History: SL60N06 | MMP4435BDY | MMN8205 | IRFH7184 | MMP60R290PCTH | OSG70R350DF | IRFH7110
Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: AGM40P75D | AGM40P75A | AGM40P65E | AGM40P65AP | AGM40P55D | AGM40P55AP | AGM40P55A | AGM40P35D | AGM40P35AP | AGM40P35A-KU | AGM40P35A | AGM40P30D | AGM40P30AP | AGM40P30A | AGM60P20R | AGM60P20D
Popular searches
5n50 mosfet equivalent | a1016 transistor | a1693 transistor | a933 datasheet | c535 transistor | irf3205 reemplazo | mpsu06 | кт630

