MMP60R580PTH MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: MMP60R580PTH
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 70 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 8 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 34 nS
Cossⓘ - Capacitancia de salida: 428 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.55 Ohm
Paquete / Cubierta: TO-220
Búsqueda de reemplazo de MMP60R580PTH MOSFET
MMP60R580PTH Datasheet (PDF)
mmp60r580pth.pdf

MMP60R580P Datasheet MMP60R580P 600V 0.58 N-channel MOSFET Description MMP60R580P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as
mmp60r195pcth.pdf

MMP60R195PC Datasheet MMP60R195PC 600V 0.195 N-channel MOSFET Description MMP60R195PC is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well
mmp60r750pth.pdf

MMP60R750P Datasheet MMP60R750P 600V 0.75 N-channel MOSFET Description MMP60R750P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
mmp60r190pth.pdf

MMP60R190P Datasheet MMP60R190P 600V 0.19 N-channel MOSFET Description MMP60R190P is power MOSFET using magnachips advanced super junction technology that can realize very low on-resistance and gate charge. It will provide much high efficiency by using optimized charge coupling technology. These user friendly devices give an advantage of Low EMI to designers as well as l
Otros transistores... MMP4425 , MMP4425DY , MMP4435BDY , MMP60R190PTH , MMP60R195PCTH , MMP60R290PCTH , MMP60R290PTH , MMP60R360PTH , 8N60 , MMP60R750PTH , MMP6463 , MMP6465 , MMP65R190PTH , MMP6965 , MMP6967 , MMP6975 , MMP7245 .
History: SSG5509A | DH012N03P | FDMC8360L | SR3400 | WMK175N10LG4 | TK7P60W | CS3205B8
History: SSG5509A | DH012N03P | FDMC8360L | SR3400 | WMK175N10LG4 | TK7P60W | CS3205B8



Liste
Recientemente añadidas las descripciónes de los transistores:
MOSFET: JMSL0406AKQ | JMSL0406AK | JMSL0406AGQ | JMSL0406AGDQ | JMSL0406AGD | JMSL04060GDQ | JMSL04055UQ | JMSL04055GQ | JMSL0403PU | JMSL0403PK | JMSL0403PGQ | JMSL0403PG | JMSL0403AU | JMSL0403AGQ | JMSL0403AG | JMTQ90N02A
Popular searches
2g381 transistor | 2sc2383 transistor equivalent | 2sd669 transistor | 75n65kdf | c2274 transistor | c5200 2sc5200 transistor datasheet | d2390 datasheet | 2sa750 replacement