SM3115NSU MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SM3115NSU

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 50 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 60 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 13 nS

Cossⓘ - Capacitancia de salida: 410 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.0054 Ohm

Encapsulados: TO-252

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SM3115NSU datasheet

 ..1. Size:266K  sino
sm3115nsu.pdf pdf_icon

SM3115NSU

SM3115NSU N-Channel Enhancement Mode MOSFET Features Pin Description 30V/60A, D RDS(ON)=5.4m (Max.) @ VGS=10V S RDS(ON)=7.3m (Max.) @ VGS=4.5V G Reliable and Rugged Lead Free and Green Devices Available Top View of TO-252-3 (RoHS Compliant) D Applications G Power Management in Desktop Computer or DC/DC Converters. S N-Channel MOSFET Ordering and Marking Informati

 8.1. Size:2124K  huashuo
hsm3115.pdf pdf_icon

SM3115NSU

HSM3115 P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The HSM3115 is the high cell density trenched P- ch MOSFETs, which provide excellent RDSON and RDS(ON),max 8.7 m gate charge for most of the synchronous buck converter applications. ID -14 A The HSM3115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli

 9.1. Size:173K  sino
sm3117nsu.pdf pdf_icon

SM3115NSU

SM3117NSU N-Channel Enhancement Mode MOSFET Features Pin Description 30V/50A, D RDS(ON)=7.2m (max.) @ VGS=10V S RDS(ON)=9.8m (max.) @ VGS=4.5V G Provide Excellent Qgd x Rds-on 100% UIS + Rg Tested Top View of TO-252-2 Reliable and Rugged D Lead Free and Green Devices Available (RoHS Compliant) G Applications Power Management in Desktop Computer or S

 9.2. Size:551K  sino
sm3119nau.pdf pdf_icon

SM3115NSU

SM3119NAU N-Channel Enhancement Mode MOSFET Features Pin Description Drain 4 30V/50A, RDS(ON)=10.5m (max.) @ VGS=10V 3 Source 2 RDS(ON)=14.5m (max.) @ VGS=4.5V 1 Gate Super High Dense Cell Design Reliable and Rugged Top View of TO-252-3 Lead Free and Green Devices Available D (RoHS Compliant) Applications G Power Management in Desktop Computer or DC

Otros transistores... MMQ60R115PCTH, MMQ60R115PTH, MMQ60R190PTH, MMSF3P02HDR2, MMSF7P03HDR2, SM2A06NSU, SM3005NSF, SM3114NAU, IRF1404, SM3116NBU, SM3116NSU, SM3305PSQG, SM3307PSQG, SM3318NSQG, SM4021NSKP, SM4025PSUC, SM4028NSKP