SM3115NSU Todos los transistores

 

SM3115NSU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SM3115NSU
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 410 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0054 Ohm
   Paquete / Cubierta: TO-252
 

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SM3115NSU Datasheet (PDF)

 ..1. Size:266K  sino
sm3115nsu.pdf pdf_icon

SM3115NSU

SM3115NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/60A,D RDS(ON)=5.4m (Max.) @ VGS=10VS RDS(ON)=7.3m (Max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant)DApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering and Marking Informati

 8.1. Size:2124K  huashuo
hsm3115.pdf pdf_icon

SM3115NSU

HSM3115 P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The HSM3115 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),max 8.7 m gate charge for most of the synchronous buck converter applications. ID -14 A The HSM3115 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reli

 9.1. Size:173K  sino
sm3117nsu.pdf pdf_icon

SM3115NSU

SM3117NSU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/50A,D RDS(ON)=7.2m (max.) @ VGS=10VS RDS(ON)=9.8m (max.) @ VGS=4.5VG Provide Excellent Qgd x Rds-on 100% UIS + Rg TestedTop View of TO-252-2 Reliable and RuggedD Lead Free and Green Devices Available(RoHS Compliant)GApplications Power Management in Desktop Computer orS

 9.2. Size:551K  sino
sm3119nau.pdf pdf_icon

SM3115NSU

SM3119NAU N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDrain 4 30V/50A, RDS(ON)=10.5m (max.) @ VGS=10V3Source2 RDS(ON)=14.5m (max.) @ VGS=4.5V1Gate Super High Dense Cell Design Reliable and RuggedTop View of TO-252-3 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in Desktop Computer or DC

Otros transistores... MMQ60R115PCTH , MMQ60R115PTH , MMQ60R190PTH , MMSF3P02HDR2 , MMSF7P03HDR2 , SM2A06NSU , SM3005NSF , SM3114NAU , IRF1404 , SM3116NBU , SM3116NSU , SM3305PSQG , SM3307PSQG , SM3318NSQG , SM4021NSKP , SM4025PSUC , SM4028NSKP .

History: IPD031N03L

 

 
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