SM3116NBU Todos los transistores

 

SM3116NBU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: SM3116NBU
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 60 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 260 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.0057 Ohm
   Paquete / Cubierta: TO-252
 

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SM3116NBU Datasheet (PDF)

 ..1. Size:265K  sino
 sm3116nbu.pdf pdf_icon

SM3116NBU

SM3116NBU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/60A,D RDS(ON)=5.7m (Max.) @ VGS=10VS RDS(ON)=9m (Max.) @ VGS=4.5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant)DApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Channel MOSFETOrdering and Marking Information

 7.1. Size:551K  sino
 sm3116nau.pdf pdf_icon

SM3116NBU

SM3116NAU N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/60A,D RDS(ON)=5.7m (Max.) @ VGS=10VS RDS(ON)=9m (Max.) @ VGS=4.5VG Super High Dense Cell Design Reliable and RuggedTop View of TO-252-3 Lead Free and Green Devices AvailableD(RoHS Compliant)ApplicationsG Power Management in Desktop Computer or DC/DC Converters.SN-Chann

 7.2. Size:149K  sino
 sm3116nsuc.pdf pdf_icon

SM3116NBU

SM3116NSUC N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/60A, RDS(ON)=5.7m (Max.) @ VGS=10V RDS(ON)=8m (Max.) @ VGS=4.5V SDG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-251S (RoHS Compliant)D 100% UIS + Rg TestedGApplications Power Management in Desktop Computer orS DC/DC Converters.N-Channel MOSFE

 7.3. Size:160K  sino
 sm3116naf sm3116nafp.pdf pdf_icon

SM3116NBU

SM3116NAF/SM3116NAFP N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/58A, RDS(ON)= 5.5m (Max.) @ VGS=10V RDS(ON)= 7.8m (Max.) @ VGS=4.5VS S Reliable and Rugged D DG G Lead Free and Green Devices AvailableTop View of TO-220FPTop View of TO-220(RoHS Compliant)D 100% UIS + Rg TestedApplicationsG Power Management in Desktop Computer or

MOSTRAR MÁS

Otros transistores... MMQ60R115PTH , MMQ60R190PTH , MMSF3P02HDR2 , MMSF7P03HDR2 , SM2A06NSU , SM3005NSF , SM3114NAU , SM3115NSU , IRFP260N , SM3116NSU , SM3305PSQG , SM3307PSQG , SM3318NSQG , SM4021NSKP , SM4025PSUC , SM4028NSKP , SM4370NSKP .

History: STL80N3LLH6 | BUK962R8-30B

 

 
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