SM3305PSQG MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SM3305PSQG
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 3.1 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 13 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 31 nC
   trⓘ - Tiempo de subida: 15 nS
   Cossⓘ - Capacitancia de salida: 315 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.012 Ohm
   Paquete / Cubierta: DFN3X3-8

Búsqueda de reemplazo de MOSFET SM3305PSQG

SM3305PSQG Datasheet (PDF)

..1. Size:313K sino
sm3305psqg.pdf

SM3305PSQA/SM3305PSQG P-Channel Enhancement Mode MOSFETFeatures Pin Description Top View Bottom View Top View Bottom View -30V/-40A,DDDRDS(ON) =12m (max.) @ VGS =-10V DDDDDRDS(ON) =17m (max.) @ VGS =-6VGSG SSRDS(ON) =21m (max.) @ VGS =-4.5V SSS Reliable and Rugged DFN3x3-8(punch type) DFN3x3-8(saw type) Lead Free and Green Devices Available ( 5,6,7,8 )D D

8.1. Size:875K huashuo
hsm3305.pdf

HSM3305 Dual P-Ch 30V Fast Switching MOSFETs Description Product Summary V -30 V DSThe HSM3305 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and R 42 m DS(ON),typgate charge for most of the synchronous buck converter applications. I -5 A DThe HSM3305 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full func

9.1. Size:182K sino
sm3303psqg.pdf

SM3303PSQG P-Channel Enhancement Mode MOSFETFeatures Pin Description -30V/-50A,DDDDRDS(ON) =9.5m(max.) @ VGS =-10VRDS(ON) =16m(max.) @ VGS =-4.5V Reliable and RuggedSGSS Lead Free and Green Devices AvailableDFN3x3-8 (RoHS Compliant) 100% UIS + Rg Tested( 5,6,7,8 )DDDD HBM ESD protection level pass 8KVNote : The diode connected between the gate a

9.2. Size:310K sino
sm3307psqg.pdf

SM3307PSQA/SM3307PSQG P-Channel Enhancement Mode MOSFETFeatures Pin Description Top View Bottom View Top View Bottom View -30V/-33A,DDDDRDS(ON) =18m (max.) @ VGS =-10VDDDDRDS(ON) =30m (max.) @ VGS =-4.5VGSG SSSSS Super High Dense Cell DesignDFN3x3-8(punch type) DFN3x3-8(saw type) Reliable and Rugged( 5,6,7,8 ) Lead Free and Green Devices Available

9.3. Size:277K sino
sm3308nsqa.pdf

SM3308NSQAN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 30V/35A,DDRDS(ON) =7.3m (max.) @ VGS =10VRDS(ON) =10.5m (max.) @ VGS =4.5VGSSS 100% UIS + Rg TestedDFN3x3A-8_EP ESD Protection Reliable and Rugged(5,6,7,8)DDDD Lead Free and Green Devices Available(RoHS Compliant)(4) GApplications Power Management in Notebook Computer,Port

9.4. Size:897K globaltech semi
gsm3309ws.pdf

GSM3309WS GSM3309WS 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM3309WS, N-Channel enhancement mode 30V/20A,RDS(ON)=8m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/15A,RDS(ON)=11m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited

9.5. Size:868K globaltech semi
gsm3302w.pdf

GSM3302W GSM3302W 20V N-Channel Enhancement Mode MOSFETProduct Description Features GSM3302W, N-Channel enhancement mode 20V/14A,RDS(ON)=14m@VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/12A,RDS(ON)=18m@VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/10A,RDS(ON)=26m@VGS=1.8V Super high density cell design for extremelyThese devices are

9.6. Size:865K globaltech semi
gsm3306ws.pdf

GSM3306WS GSM3306WS 30V N-Channel Enhancement Mode MOSFETProduct Description Features GSM3306WS, N-Channel enhancement mode 30V/20A,RDS(ON)=5.6m@VGS=10V MOSFET, uses Advanced Trench Technology to 30V/15A,RDS(ON)=7.4m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremelylow RDS (ON) These devices are particularly sui

9.7. Size:481K huashuo
hsm3303.pdf

HSM3303 Dual P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The HSM3303 is the high cell density trenched P-ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 18 m gate charge for most of the synchronous buck converter applications. ID -6.5 A The HSM3303 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function

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