SM3307PSQG Todos los transistores

 ..1. Size:310K  sino
 sm3307psqg.pdf

SM3307PSQA/SM3307PSQG P-Channel Enhancement Mode MOSFET Features Pin Description Top View Bottom View Top View Bottom View -30V/-33A, D D D D RDS(ON) =18m (max.) @ VGS =-10V D DDD RDS(ON) =30m (max.) @ VGS =-4.5V G SG S S S SS Super High Dense Cell Design DFN3x3-8(punch type) DFN3x3-8(saw type) Reliable and Rugged ( 5,6,7,8 ) Lead Free and Green Devices Available

 9.1. Size:182K  sino
 sm3303psqg.pdf

SM3303PSQG P-Channel Enhancement Mode MOSFET Features Pin Description -30V/-50A, D D D D RDS(ON) =9.5m (max.) @ VGS =-10V RDS(ON) =16m (max.) @ VGS =-4.5V Reliable and Rugged SG S S Lead Free and Green Devices Available DFN3x3-8 (RoHS Compliant) 100% UIS + Rg Tested ( 5,6,7,8 ) DDDD HBM ESD protection level pass 8KV Note The diode connected between the gate a

 9.2. Size:277K  sino
 sm3308nsqa.pdf

SM3308NSQA N-Channel Enhancement Mode MOSFET Features Pin Description D D 30V/35A, D D RDS(ON) =7.3m (max.) @ VGS =10V RDS(ON) =10.5m (max.) @ VGS =4.5V G S S S 100% UIS + Rg Tested DFN3x3A-8_EP ESD Protection Reliable and Rugged (5,6,7,8) DDDD Lead Free and Green Devices Available (RoHS Compliant) (4) G Applications Power Management in Notebook Computer, Port

 9.3. Size:313K  sino
 sm3305psqg.pdf

SM3305PSQA/SM3305PSQG P-Channel Enhancement Mode MOSFET Features Pin Description Top View Bottom View Top View Bottom View -30V/-40A, D D D RDS(ON) =12m (max.) @ VGS =-10V D D DDD RDS(ON) =17m (max.) @ VGS =-6V G SG S S RDS(ON) =21m (max.) @ VGS =-4.5V S SS Reliable and Rugged DFN3x3-8(punch type) DFN3x3-8(saw type) Lead Free and Green Devices Available ( 5,6,7,8 ) D D

 9.4. Size:897K  globaltech semi
 gsm3309ws.pdf

GSM3309WS GSM3309WS 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3309WS, N-Channel enhancement mode 30V/20A,RDS(ON)=8m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/15A,RDS(ON)=11m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS(ON) These devices are particularly suited

 9.5. Size:868K  globaltech semi
 gsm3302w.pdf

GSM3302W GSM3302W 20V N-Channel Enhancement Mode MOSFET Product Description Features GSM3302W, N-Channel enhancement mode 20V/14A,RDS(ON)=14m @VGS=4.5V MOSFET, uses Advanced Trench Technology to 20V/12A,RDS(ON)=18m @VGS=2.5V provide excellent RDS(ON), low gate charge. 20V/10A,RDS(ON)=26m @VGS=1.8V Super high density cell design for extremely These devices are

 9.6. Size:865K  globaltech semi
 gsm3306ws.pdf

GSM3306WS GSM3306WS 30V N-Channel Enhancement Mode MOSFET Product Description Features GSM3306WS, N-Channel enhancement mode 30V/20A,RDS(ON)=5.6m @VGS=10V MOSFET, uses Advanced Trench Technology to 30V/15A,RDS(ON)=7.4m @VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly sui

 9.7. Size:481K  huashuo
 hsm3303.pdf

HSM3303 Dual P-Ch 30V Fast Switching MOSFETs Description Product Summary VDS -30 V The HSM3303 is the high cell density trenched P- ch MOSFETs, which provide excellent RDSON and RDS(ON),typ 18 m gate charge for most of the synchronous buck converter applications. ID -6.5 A The HSM3303 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function

 9.8. Size:875K  huashuo
 hsm3305.pdf

HSM3305 Dual P-Ch 30V Fast Switching MOSFETs Description Product Summary V -30 V DS The HSM3305 is the high cell density trenched P- ch MOSFETs, which provide excellent RDSON and R 42 m DS(ON),typ gate charge for most of the synchronous buck converter applications. I -5 A D The HSM3305 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full func