SM4927BSK MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SM4927BSK
   Tipo de FET: MOSFET
   Polaridad de transistor: P

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2.5 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 8.9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.3 V
   Qgⓘ - Carga de la puerta: 20 nC
   trⓘ - Tiempo de subida: 10.4 nS
   Cossⓘ - Capacitancia de salida: 204 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.021 Ohm
   Paquete / Cubierta: SOP-8

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SM4927BSK Datasheet (PDF)

..1. Size:266K sino
sm4927bsk.pdf

SM4927BSKDual P-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1D1 -30V/-8.9A,D2D2RDS(ON)=21m (max.) @ VGS=-10VRDS(ON)=35m (max.) @ VGS=-4.5VS1 Reliable and RuggedG1S2G2 Lead Free and Green Devices Available (RoHS Compliant) Top View of SOP 8 HBM ESD protection level pass 2KV(8) (7) (6) (5)D1 D1 D2 D2Note : The diode connected between the gat

0.1. Size:882K cn vbsemi
sm4927bskc.pdf

SM4927BSKCwww.VBsemi.twDual P-Channel 30-V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-freeVDS (V) RDS(on) ()ID (A)d, e Qg (Typ.) TrenchFET Power MOSFET0.021 at VGS = - 10 V - 9.5 100 % UIS TestedRoHS- 30 15 nCCOMPLIANT0.028 at VGS = - 4.5 V - 8.0APPLICATIONS Load Switches- Notebook PCs- Desktop PCsSO-8S1 S2- Game StationsS1 1 D18

9.1. Size:503K taiwansemi
tsm4925dcs.pdf

TSM4925D 30V Dual P-Channel MOSFET SOP-8 Pin Definition: PRODUCT SUMMARY 1. Source 1 8. Drain 1 2. Gate 1 7. Drain 1 VDS (V) RDS(on)(m) ID (A) 3. Source 2 6. Drain 2 25 @ VGS = -10V -7.1 4. Gate 2 5. Drain 2 -30 41 @ VGS = -4.5V -5.5 Features Block Diagram Advance Trench Process Technology High Density Cell Design for Ultra Low On-resistance Applicati

9.2. Size:1468K globaltech semi
gsm4924.pdf

40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4924, N-Channel enhancement mode 40V/8A,RDS(ON)= 24m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/6A,RDS(ON)= 48m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely These devices are particularly suited for low low RDS (ON) voltage power ma

9.3. Size:834K globaltech semi
gsm4925ws.pdf

GSM4925WS 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4925WS, P-Channel enhancement mode -30V/-8.0A,RDS(ON)= 18m@VGS= -10V OSFET, uses Advanced Trench Technology to -30V/-6.0A,RDS(ON)= 26m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suite

9.4. Size:719K globaltech semi
gsm4925.pdf

GSM4925 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4925, P-Channel enhancement mode -30V/-7.2A,RDS(ON)= 28m@VGS= -10V OSFET, uses Advanced Trench Technology to -30V/-5.8A,RDS(ON)= 37m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited fo

9.5. Size:1478K globaltech semi
gsm4924w.pdf

GSM4924W 40V N-Channel Enhancement Mode MOSFET Product Description Features GSM4924W, N-Channel enhancement mode 40V/8A,RDS(ON)=22m@VGS=10V MOSFET, uses Advanced Trench Technology to 40V/6A,RDS(ON)=28m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for low S

9.6. Size:833K globaltech semi
gsm4925s.pdf

GSM4925S 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4925S, P-Channel enhancement mode -30V/-7.5A,RDS(ON)= 18m@VGS= -10V OSFET, uses Advanced Trench Technology to -30V/-6.0A,RDS(ON)= 26m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

9.7. Size:823K globaltech semi
gsm4925w.pdf

GSM4925W 30V P-Channel Enhancement Mode MOSFET Product Description Features GSM4925W, P-Channel enhancement mode -30V/-7.2A,RDS(ON)= 30m@VGS= -10V OSFET, uses Advanced Trench Technology to -30V/-5.8A,RDS(ON)= 36m@VGS= -4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited

9.8. Size:846K globaltech semi
gsm4922w.pdf

GSM4922W 100V N-Channel Enhancement Mode MOSFET Product Description Features GSM4922W, N-Channel enhancement mode 100V/2.0A,RDS(ON)=290m@VGS=10V MOSFET, uses Advanced Trench Technology to 100V/1.5A,RDS(ON)=300m@VGS=4.5V provide excellent RDS(ON), low gate charge. Super high density cell design for extremely low RDS (ON) These devices are particularly suited for

9.9. Size:310K silicon standard
ssm4924gm.pdf

SSM4924GMDual N-channel Enhancement-mode Power MOSFETs Simple drive requirement BV BVDSS 20VD2D2D1Lower gate charge R RDS(ON) 35mD1Fast switching characteristicsI 6AIDG2S2Pb-free; RoHS compliant.G1SO-8S1DESCRIPTIOND2D1Advanced Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching, ruggedizeddevice desig

9.10. Size:153K silicon standard
ssm4920m.pdf

SSM4920MN-CHANNEL ENHANCEMENT-MODEPOWER MOSFETSimple Drive Requirement BV 25VDSSD2 D2Low On-resistance R 25mD1 DS(ON)D1Fast Switching I 7ADG2S2G1SO-8S1DescriptionD2D1Power MOSFETs from Silicon Standard provide thedesigner with the best combination of fast switching,G2ruggedized device design, low on-resistance and cost- G1effectiveness.S1S2

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