SM7305ESKP MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SM7305ESKP
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 1.56 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 11 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   trⓘ - Tiempo de subida: 8 nS
   Cossⓘ - Capacitancia de salida: 180 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm
   Paquete / Cubierta: DFN5X6-8

Búsqueda de reemplazo de MOSFET SM7305ESKP

SM7305ESKP Datasheet (PDF)

..1. Size:351K sino
sm7305eskp.pdf

SM7305ESKP Dual N-Channel Enhancement Mode MOSFETFeatures Pin Description Channel 1S2S230V/48A,G2S2RDS(ON) = 7m (max.) @ VGS = 10VRDS(ON) = 10m (max.) @ VGS = 4.5VPin1D1D1G1D1 Channel 230V/50A,DUAL DFN5x6-8RDS(ON) = 3.3m (max.) @ VGS =10VRDS(ON) = 5.2m (max.) @ VGS =4.5VD1 S1/D2(2)(3)(4) 100% UIS Tested Reliable and RuggedG1 (1) Lead Free Availabl

9.1. Size:266K sino
sm7307dskp.pdf

SM7307DSKPDual N-Channel Enhancement Mode MOSFETFeatures Pin Description 30V/35A,D2D2RDS(ON) = 8.4m (max.) @ VGS = 10V D1D1RDS(ON) = 11.4m (max.) @ VGS = 4.5VPin 1 100% UIS + Rg TestedS2G2S1G1 ESD ProtectionDFN5x6C-8_EP2 Reliable and Rugged Lead Free Available (RoHS Compliant)D1 D1 D2 D2Applications Power Management in Notebook Computer,G1 G2 Portable E

9.2. Size:421K sino
sm7304eskp.pdf

SM7304ESKP Dual N-Channel Enhancement Mode MOSFETFeatures Pin Description Channel 1S2S230V/27A,G2S2RDS(ON) = 14m (max.) @ VGS = 10VRDS(ON) = 19.5m (max.) @ VGS = 4.5VPin1D1D1G1D1 Channel 2 (Integrated Schottky Diode)30V/50A,DUAL DFN5x6-8RDS(ON) = 7.4m (max.) @ VGS =10VRDS(ON) = 11.8m (max.) @ VGS =4.5VD1 S1/D2(2)(3)(4) 100% UIS Tested Reliable and Rug

9.3. Size:383K sino
sm7303eskp.pdf

SM7303ESKP Dual N-Channel Enhancement Mode MOSFETFeatures Pin Description Channel 1S2S230V/48A,G2S2RDS(ON) = 7m (max.) @ VGS = 10VRDS(ON) = 10m (max.) @ VGS = 4.5VPin1D1D1G1D1 Channel 2 (Integrated Schottky Diode)30V/50A,DUAL DFN5x6-8RDS(ON) = 5m (max.) @ VGS =10VRDS(ON) = 6.5m (max.) @ VGS =4.5VD1 S1/D2(2)(3)(4) 100% UIS Tested Reliable and RuggedG

9.4. Size:311K sino
sm7308cskp.pdf

SM7308CSKPDual Enhancement Mode MOSFET (N-and P-Channel)Features Pin Description N Channel (Integrated Schottky Diode)D230V/24A, D1D2D1RDS(ON) = 22m (max.) @ VGS = 10VRDS(ON) = 32.5m (max.) @ VGS = 4.5V G2Pin 1S2G1 P ChannelS1-30V/-19.8A,DFN5x6C-8_EP2RDS(ON) = 30m (max.) @ VGS =-10VRDS(ON) = 46m (max.) @ VGS =-4.5V (8) (7) (6) (5)D1 D1 D2 D2 100% UIS +

9.5. Size:351K sino
sm7306eskp.pdf

SM7306ESKP Dual N-Channel Enhancement Mode MOSFETFeatures Pin Description Channel 1S2S230V/48A,G2S2RDS(ON) = 7m (max.) @ VGS = 10VRDS(ON) = 10m (max.) @ VGS = 4.5VPin1D1D1G1D1 Channel 230V/50A, DUAL DFN5x6-8RDS(ON) = 4m (max.) @ VGS =10VRDS(ON) = 5.3m (max.) @ VGS =4.5VD1 S1/D2(2)(3)(4) 100% UIS Tested Reliable and RuggedG1 (1) Lead Free Available (

9.6. Size:367K sino
sm7302eskp.pdf

SM7302ESKP Dual N-Channel Enhancement Mode MOSFETFeatures Pin Description Channel 1S2S230V/48A,G2S2RDS(ON) = 7m (max.) @ VGS = 10VRDS(ON) = 10m (max.) @ VGS = 4.5VPin1D1D1G1D1 Channel 2 (Integrated Schottky Diode)30V/50A,DUAL DFN5x6-8RDS(ON) = 4m (max.) @ VGS =10VRDS(ON) = 5.9m (max.) @ VGS =4.5VD1 S1/D2(2)(3)(4) 100% UIS Tested Reliable and RuggedG

9.7. Size:263K sino
sm7301dsk.pdf

SM7301DSKDual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1D1D2 30V/12A,D2 RDS(ON)= 10m (max.) @ VGS= 10V RDS(ON)= 15.5m (max.) @ VGS= 4.5VS1G1 Super High Dense Cell DesignS2G2 Reliable and RuggedTop View of SOP-8 Lead Free and Green Devices Available (RoHS Compliant)(8) (7) (6) (5)D1 D1 D2 D2Applications Power Management in Notebook

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