SM7306ESKP MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SM7306ESKP

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.56 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 30 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 8 nS

Cossⓘ - Capacitancia de salida: 180 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.007 Ohm

Encapsulados: DFN5X6-8

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SM7306ESKP datasheet

 ..1. Size:351K  sino
sm7306eskp.pdf pdf_icon

SM7306ESKP

SM7306ESKP Dual N-Channel Enhancement Mode MOSFET Features Pin Description Channel 1 S2S2 30V/48A, G2S2 RDS(ON) = 7m (max.) @ VGS = 10V RDS(ON) = 10m (max.) @ VGS = 4.5V Pin1 D1D1 G1D1 Channel 2 30V/50A, DUAL DFN5x6-8 RDS(ON) = 4m (max.) @ VGS =10V RDS(ON) = 5.3m (max.) @ VGS =4.5V D1 S1/D2 (2)(3)(4) 100% UIS Tested Reliable and Rugged G1 (1) Lead Free Available (

 9.1. Size:351K  sino
sm7305eskp.pdf pdf_icon

SM7306ESKP

SM7305ESKP Dual N-Channel Enhancement Mode MOSFET Features Pin Description Channel 1 S2S2 30V/48A, G2S2 RDS(ON) = 7m (max.) @ VGS = 10V RDS(ON) = 10m (max.) @ VGS = 4.5V Pin1 D1D1 G1D1 Channel 2 30V/50A, DUAL DFN5x6-8 RDS(ON) = 3.3m (max.) @ VGS =10V RDS(ON) = 5.2m (max.) @ VGS =4.5V D1 S1/D2 (2)(3)(4) 100% UIS Tested Reliable and Rugged G1 (1) Lead Free Availabl

 9.2. Size:266K  sino
sm7307dskp.pdf pdf_icon

SM7306ESKP

SM7307DSKP Dual N-Channel Enhancement Mode MOSFET Features Pin Description 30V/35A, D2D2 RDS(ON) = 8.4m (max.) @ VGS = 10V D1D1 RDS(ON) = 11.4m (max.) @ VGS = 4.5V Pin 1 100% UIS + Rg Tested S2G2 S1G1 ESD Protection DFN5x6C-8_EP2 Reliable and Rugged Lead Free Available (RoHS Compliant) D1 D1 D2 D2 Applications Power Management in Notebook Computer, G1 G2 Portable E

 9.3. Size:421K  sino
sm7304eskp.pdf pdf_icon

SM7306ESKP

SM7304ESKP Dual N-Channel Enhancement Mode MOSFET Features Pin Description Channel 1 S2S2 30V/27A, G2S2 RDS(ON) = 14m (max.) @ VGS = 10V RDS(ON) = 19.5m (max.) @ VGS = 4.5V Pin1 D1D1 G1D1 Channel 2 (Integrated Schottky Diode) 30V/50A, DUAL DFN5x6-8 RDS(ON) = 7.4m (max.) @ VGS =10V RDS(ON) = 11.8m (max.) @ VGS =4.5V D1 S1/D2 (2)(3)(4) 100% UIS Tested Reliable and Rug

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