SM8008NSU MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: SM8008NSU
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 50 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 80 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 28 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 38 nC
   trⓘ - Tiempo de subida: 13 nS
   Cossⓘ - Capacitancia de salida: 115 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.035 Ohm
   Paquete / Cubierta: TO-252

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SM8008NSU Datasheet (PDF)

..1. Size:263K sino
sm8008nsu.pdf

SM8008NSU N-Channel Enhancement Mode MOSFETFeatures Pin Configuration 80V/28A,DRDS(ON) = 35m (max.) @ VGS = 10VSRDS(ON )= 43m (max.) @ VGS = 5VG Reliable and Rugged Lead Free and Green Devices AvailableTop View of TO-252-3(RoHS Compliant)DApplicationsG LCD Application System.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM8008NS U : T

6.1. Size:261K sino
sm8008nsk.pdf

SM8008NSKN-Channel Enhancement Mode MOSFETFeatures Pin DescriptionDD 80V/8A,DD RDS(ON)= 29m (max.) @ VGS= 10V RDS(ON)= 34m (max.) @ VGS= 4.5VSS Reliable and RuggedSG Lead Free and Green Devices AvailableTop View of SOP-8 (RoHS Compliant)( 5,6,7,8 )D D D DApplications(4)G LCD Application System. LED TV Backlight Module.S S S(1, 2, 3)N-Cha

9.1. Size:235K sino
sm8005dsk.pdf

SM8005DSK Dual N-Channel Enhancement Mode MOSFETFeatures Pin DescriptionD1D1D2 80V/4.4A,D2 RDS(ON)= 54m (max.) @ VGS= 10V RDS(ON)= 63m (max.) @ VGS= 4.5VS1G1 ESD protectedS2G2 100% UIS + Rg TestedTop View of SOP-8 Reliable and Rugged Lead Free and Green Devices AvailableD1 D1 D2 D2 (RoHS Compliant)ApplicationsG1 G2 LED Application System.S1 S2

9.2. Size:251K sino
sm8003nf.pdf

SM8003NF N-Channel Enhancement Mode MOSFETFeatures Pin Description 80V/70A,RDS(ON)=11m (max.) @ VGS=10V Reliable and Rugged SDG Lead Free and Green Devices AvailableTop View of TO-220(RoHS Compliant)DApplicationsG Synchronous Rectification. Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM8003N F : TO

9.3. Size:263K sino
sm8009nsf.pdf

SM8009NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 80V/130A,RDS(ON)= 5.3m (max.) @ VGS=10V Reliable and RuggedSD Lead Free and Green Devices AvailableG(RoHS Compliant)Top View of TO-220DApplications Synchronous Rectification.G Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM8009NS

9.4. Size:263K sino
sm8007nsu.pdf

SM8007NSU N-Channel Enhancement Mode MOSFETFeatures Pin Configuration 80V/66A,DRDS(ON) = 12m (max.) @ VGS = 10VS Reliable and RuggedG Lead Free and Green Devices Available(RoHS Compliant)Top View of TO-252-3DApplicationsG Synchronous Rectification. Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM8007

9.5. Size:236K sino
sm8007nsf.pdf

SM8007NSFN-Channel Enhancement Mode MOSFETFeatures Pin Description 80V/66A,RDS(ON)=12m (max.) @ VGS=10V Reliable and RuggedSD Lead Free and Green Devices AvailableG(RoHS Compliant)Top View of TO-220DApplications Synchronous Rectification.G Power Management in Inverter Systems.SN-Channel MOSFETOrdering and Marking InformationPackage CodeSM8007NS F

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