VN0606 Todos los transistores

Supertex inc. VN0606 N-Channel Enhancement-Mode Vertical DMOS FET Features General Description Free from secondary breakdown This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex s well-proven, Low power drive requirement silicon-gate manufacturing process. This combination Ease of paralleling produces a device with the power h

TN0601L, VN0606L, VN66AFD Vishay Siliconix N-Channel 60-V (D-S) MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID (A) TN0601L 1.8 @ VGS = 10 V 0.5 to 2 0.47 VN0606L 60 3 @ VGS = 10 V 0.8 to 2 0.33 VN66AFD 3 @ VGS = 10 V 0.8 to 2.5 1.46 FEATURES BENEFITS APPLICATIONS D Low On-Resistance 1.2 W D Low Offset Voltage D Direct Logic-Level Interface TTL/CMO

VN10LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel 60-V (D-S) MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LLS 5 @ VGS = 10 V 0.8 to 2.5 0.32 VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.18 60 VN0610LL 5 @ VGS = 10 V 0.8 to 2.5 0.28 VN2222LL 5 @ VGS = 10 V 0.6 to 2.5 0.23 FEATURES BENEFITS APPLICATIONS D Low On-Resistance 2.5 W

VN10/0605/0610/2222 Series N-Channel Enhancement-Mode MOSFET Transistors VN10LE VN0605T VN2222LL VN10LM VN0610LL VN2222LM Product Summary Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38 VN10LM 5 @ VGS = 10 V 0.8 to 2.5 0.32 VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.18 60 60 VN0610LL 5 @ VGS = 10 V 0.8 to 2.5 0.28 VN2222LL 7.5 @ VGS