VN10LLS Todos los transistores

 ..1. Size:47K  vishay
 vn0610ll vn10lls.pdf

VN10LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel 60-V (D-S) MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LLS 5 @ VGS = 10 V 0.8 to 2.5 0.32 VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.18 60 VN0610LL 5 @ VGS = 10 V 0.8 to 2.5 0.28 VN2222LL 5 @ VGS = 10 V 0.6 to 2.5 0.23 FEATURES BENEFITS APPLICATIONS D Low On-Resistance 2.5 W

 ..2. Size:51K  vishay
 vn10lls vn0605t vn0610ll vn2222ll.pdf

VN10LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel 60-V (D-S) MOSFETs PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LLS 5 @ VGS = 10 V 0.8 to 2.5 0.32 VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.18 60 VN0610LL 5 @ VGS = 10 V 0.8 to 2.5 0.28 VN2222LL 5 @ VGS = 10 V 0.6 to 2.5 0.23 FEATURES BENEFITS APPLICATIONS D Low On-Resistance 2.5 W

 0.1. Size:75K  vishay
 vn10lls,0605t,0610ll,2222ll.pdf

VN10LLS, VN0605T, VN0610LL, VN2222LL Vishay Siliconix N-Channel Enhancement-Mode MOSFET Transistors PRODUCT SUMMARY Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LLS 5 @ VGS = 10 V 0.8 to 2.5 0.32 VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.18 60 60 60 VN0610LL 5 @ VGS = 10 V 0.8 to 2.5 0.28 VN2222LL 5 @ VGS = 10 V 0.6 to 2.5 0.23 FEATURES BENEFITS APPLICATIONS D

 9.1. Size:53K  motorola
 vn10lm.rev1.pdf

MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA by VN10LM/D TMOS FET Transistor VN10LM N Channel Enhancement 3 DRAIN 2 GATE 1 SOURCE 1 2 3 CASE 29 05, STYLE 22 TO 92 (TO 226AE) MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Gate Source Voltage Continuous VGS 20 Vdc Non repetitive (tp 50 s) VGSM 40 Vpk

 9.2. Size:33K  diodes
 vn10lp.pdf

N-CHANNEL ENHANCEMENT VN10LP MODE VERTICAL DMOS FET ISSUE 2 NOVEMBER 2005 FEATURES * 60 Volt VDS * RDS(on)=5 D G S REFER TO ZVN3306A FOR GRAPHS E-Line TO92 Compatible ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb = 25 C ID 270 mA Pulsed Drain Current IDM 3A Gate Source Voltage VGS 20 V Power D

 9.3. Size:24K  diodes
 vn10lf.pdf

SOT23 N-CHANNEL ENHANCEMENT VN10LF MODE VERTICAL DMOS FET ISSUE 2 JANUARY 1996 FEATURES * 60 Volt VDS S * RDS(on)=5 D PARTMARKING DETAIL MY G ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb = 25 C ID 150 mA Pulsed Drain Current IDM 3A Gate Source Voltage VGS 20 V Power Dissipation at Tamb = 25

 9.4. Size:47K  siliconix
 vn0605t vn10le vn10lm vn2222lm.pdf

VN10/0605/0610/2222 Series N-Channel Enhancement-Mode MOSFET Transistors VN10LE VN0605T VN2222LL VN10LM VN0610LL VN2222LM Product Summary Part Number V(BR)DSS Min (V) rDS(on) Max (W) VGS(th) (V) ID Min (A) VN10LE 5 @ VGS = 10 V 0.8 to 2.5 0.38 VN10LM 5 @ VGS = 10 V 0.8 to 2.5 0.32 VN0605T 5 @ VGS = 10 V 0.8 to 3.0 0.18 60 60 VN0610LL 5 @ VGS = 10 V 0.8 to 2.5 0.28 VN2222LL 7.5 @ VGS