SM8206AO MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: SM8206AO

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 1.25 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V

|Id|ⓘ - Corriente continua de drenaje: 6 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 15 nS

Cossⓘ - Capacitancia de salida: 100 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.027 Ohm

Encapsulados: TSSOP-8

 Búsqueda de reemplazo de SM8206AO MOSFET

- Selecciónⓘ de transistores por parámetros

 

SM8206AO datasheet

 ..1. Size:260K  sino
 sm8206ao.pdf pdf_icon

SM8206AO

SM8206AO Dual N-Channel Enhancement Mode MOSFET Features Pin Description D 20V/6A, S2 S2 G2 RDS(ON)= 20m (typ.) @ VGS= 10V RDS(ON)= 23m (typ.) @ VGS= 4.5V D S1 RDS(ON)= 27m (typ.) @ VGS= 3.1V S1 G1 RDS(ON)= 30m (typ.) @ VGS= 2.5V RDS(ON)= 42m (typ.) @ VGS= 1.8V Top View of TSSOP-8 Reliable and Rugged (1) (8) ESD Protected D D Lead Free and Green Devices Available (RoH

 7.1. Size:275K  sino
 sm8206act.pdf pdf_icon

SM8206AO

SM8206ACT Dual N-Channel Enhancement Mode MOSFET Features Pin Description G1 20V/6A, D1/D2 G2 RDS(ON)= 26m (max.) @ VGS= 4V RDS(ON)= 36m (max.) @ VGS= 2.5V S1 Super High Dense Cell Design D1/D2 S2 Reliable and Rugged Lead Free and Green Devices Available Top View of TSOT-23-6 (RoHS Compliant) (2) (5) D2 D1 Applications Power Management in Notebook C

 8.1. Size:846K  globaltech semi
 gsm8206.pdf pdf_icon

SM8206AO

GSM8206 20V P-Channel Enhancement Mode MOSFET Product Description Features GSM8206, P-Channel enhancement mode -20V/-4.5A,RDS(ON)=56m @VGS=-4.5V MOSFET, uses Advanced Trench Technology to -20V/-3.2A,RDS(ON)=70m @VGS=-2.5V provide excellent RDS(ON), low gate charge. -20V/-2.8A,RDS(ON)=96m @VGS=-1.8V Super high density cell design for extremely These devices a

 9.1. Size:235K  sino
 sm8205ao.pdf pdf_icon

SM8206AO

SM8205AO Dual N-Channel Enhancement Mode MOSFET Features Pin Description D2 18V/6A, S2 S2 RDS(ON)= 23m (typ.) @ VGS= 4.5V G2 RDS(ON)= 34m (typ.) @ VGS= 2.5V D1 100% UIS Tested S1 S1 G1 Reliable and Rugged Lead Free and Green Devices Available Top View of TSSOP-8 (RoHS Compliant) (1) (8) D1 D2 Applications (4) (5) Power Management in Notebook Computer, G1 G2 Po

MOSTRAR MÁS

Otros transistores... VN2406L, VN2410, VN2410L, VN2410LS, VN2450N8, VN2450N3, VN2460N8, VN2460N3, 5N60, SM8A01NSW, SM8A02NSF, SM8A02NSFP, SM8A02NSW, SM8A03NSW, SM8A04NSF, SM8A04NSFP, SM8A04NSU