IXTH75N10 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: IXTH75N10

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 60 nS

Cossⓘ - Capacitancia de salida: 1300 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.02 Ohm

Encapsulados: TO247

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IXTH75N10 datasheet

 ..1. Size:579K  ixys
 ixth67n10 ixtm67n10 ixth75n10 ixtm75n10 ixtt75n10.pdf pdf_icon

IXTH75N10

VDSS ID25 RDS(on) MegaMOSTMFET IXTH / IXTM 67N10 100 V 67 A 25 m IXTH / IXTM 75N10 100 V 75 A 20 m IXTT 75N10 N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings (TAB) VDSS TJ = 25 C to 150 C 100 V VDGR TJ = 25 C to 150 C; RGS = 1 M 100 V TO-204 AE (IXTM) VGS Continuous 20 V VGSM Transient 30

 0.1. Size:139K  ixys
 ixth75n10l2 ixtt75n10l2.pdf pdf_icon

IXTH75N10

Advance Technical Information LinearL2TM Power VDSS = 100V IXTH75N10L2 MOSFET w/extended ID25 = 75A IXTT75N10L2 RDS(on) 21m FBSOA D D D D O D O N-Channel Enhancement Mode RGi Guaranteed FBSOA w w G O Avalanche Rated TO-247 (IXTH) O S Symbol Test Conditions Maximum Ratings G VDSS TJ = 25 C to 150 C 100 V D D (Tab) S VDGR TJ = 25

 6.1. Size:583K  ixys
 ixth75n15 ixtt75n15.pdf pdf_icon

IXTH75N10

IXTH 75N15 VDSS = 150 V High Current IXTT 75N15 ID25 = 75 A Power MOSFET RDS(on) = 23 m N-Channel Enhancement Mode TO-247 AD (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25 C to 150 C 150 V VDGR TJ = 25 C to 150 C; RGS = 1 M 150 V VGS Continuous 20 V (TAB) VGSM Transient 30 V ID25 TC = 25 C75 A IDM TC = 25 C, pulse width limited by T

 9.1. Size:74K  1
 ixth7p50 ixth8p50.pdf pdf_icon

IXTH75N10

VDSS ID25 RDS(on) IXTH 7P50 -500V -7 A 1.5 Standard Power MOSFET IXTH 8P50 -500V -8 A 1.2 P-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings TO-247 AD VDSS TJ = 25 C to 150 C -500 V VDGR TJ = 25 C to 150 C; RGS = 1 M -500 V VGS Continuous 20 V D (TAB) VGSM Transient 30 V ID25 TC = 25 C 7P50 -7 A 8P50 -8 A IDM TC = 25 C, pulse w

MOSTRAR MÁS

Otros transistores... IXTH67N10, IXTH67N10MA, IXTH67N10MB, IXTH68N20, IXTH6N80, IXTH6N80A, IXTH6N90, IXTH6N90A, IRFB3607, IXTH7P50, IXTH8P50, IXTK21N100, IXTK33N45, IXTK33N50, IXTK74N20, IXTM10N100, IXTM10N90