SMC2342A MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: SMC2342A
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 1.3 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 20 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 12 V
|Id|ⓘ - Corriente continua de drenaje: 5 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 30 nS
Cossⓘ - Capacitancia de salida: 98 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.026 Ohm
Encapsulados: SOT-23L
Búsqueda de reemplazo de SMC2342A MOSFET
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SMC2342A datasheet
smc2342a.pdf
SMC2342A 20V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The SMC2342A is the N-Channel logic 20V/5.0A, RDS(ON) =21m (typ.)@VGS =4.5V enhancement mode power field effect transistor is 20V/4.0A, RDS(ON) =26m (typ.)@VGS =2.5V produced using high cell density. advanced trench 20V/2.8A, RDS(ON) =40m (typ.)@VGS =1.8V technology to provide excellent RD
smc2360.pdf
SMC2360 60V N-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The SMC2360 is the N-Channel logic enhancement 60V/6.1A, RDS(ON) =85m (typ.)@VGS =10V mode power field effect transistor is produced using high cell density. advanced trench technology to Improved dv/dt capability provide excellent RDS(ON) and low gate charge. Fast Switching This device is su
smc2333.pdf
SMC2333 -20V P-Channel Enhancement Mode MOSFET DESCRIPTION FEATURE The SMC2333 is the P-Channel logic enhancement -20V/-6.0A, RDS(ON) =22m (typ)@VGS =-10V mode power field effect transistor is produced using -20V/-6.0A, RDS(ON) =26m (typ)@VGS =-4.5V high cell density. advanced trench technology to -20V/-3.5A, RDS(ON) =36m (typ)@VGS =-2.5V provide excelle
Otros transistores... SM8A05NSFP, SM9188DSO, SM9988CO, SM9989DSQG, SM9993DSQG, SM9A01NSF, SM9A01NSFP, SMC2333, 7N60, SMC2360, SMC3054, SMC3056, SMC3400, SMC3401, SMC3407, SMC3414, SMC3415A
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